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Ultrapure purification process and ultrapure purification system for nitrogen, argon and oxygen

An argon and oxygen technology, applied in the field of purification system, can solve the problems of prolonging the regeneration cycle of the adsorption process, consuming the adsorption capacity of the adsorption process, and shortening the regeneration cycle of the adsorption process, so as to reduce operating costs, avoid uneven flow rates, and reduce system costs Effect

Pending Publication Date: 2019-05-14
大连华邦化学有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the catalytic oxidation plus normal temperature adsorption process used in the prior art for gas purification ensures that the catalytic oxidation reaction can proceed smoothly, but the excess oxygen added to the raw material gas will seriously consume the adsorption capacity of the back-end adsorption process. Capacity, thereby shortening the regeneration cycle of the adsorption process, improving the operating cost of the purifier, providing a nitrogen, argon, oxygen ultra-pure purification process, using a suitable catalyst in the catalytic process, so that the catalytic oxidation process does not react It is necessary to add oxygen in the feed gas to prolong the regeneration cycle of the adsorption process and reduce the purification operation cost

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  • Ultrapure purification process and ultrapure purification system for nitrogen, argon and oxygen

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Embodiment Construction

[0030] Combine below figure 1 The present invention is described further:

[0031] An ultra-pure purification system for nitrogen, argon, and oxygen, including a catalytic oxidation system, an adsorption system, and a control system; the catalytic oxidation process includes a catalytic reactor 3, a catalytic heater, a thermal insulation heating jacket, a catalytic cooler 4, and a heat exchange The device and the oxidation catalyst packed inside. The adsorption system includes two adsorption reactors, one for standby and one for use, corresponding valves, corresponding pipelines, regeneration gas heater, regeneration gas cooler and control system; the adsorption reactor is filled with deoxidizer; the catalytic system and The raw material gas inlet is connected, the catalytic system outlet is connected with the raw material gas inlet of the adsorption system, and the adsorption system outlet is connected with the product gas outlet. The inlet of the adsorption reactor is conne...

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Abstract

The invention relates to purification of bulk gases in the manufacturing field of semiconductor chips. An ultrapure purification process for nitrogen, argon and oxygen comprises the following steps: catalytic oxidation procedure: adopting an oxidation catalyst with metal oxide as a carrier to load palladium; heating raw gas to 300 DEG C, then enabling the heated gas to enter a catalytic reactor, and oxidizing methane, carbon monoxide, hydrogen and non-methane in the raw gas by an oxidation catalyst; adsorption procedure: enabling gas which is treated by the catalytic oxidation procedure and only contains three impurities, namely oxygen, water and carbon dioxide, to enter the subsequent adsorption procedure for purifying, adsorbing the oxygen, the water and the carbon dioxide by deoxidizerpurification, and removing the oxygen, the water and the carbon dioxide to below 1 ppb. The process disclosed by the invention is simple and no excess oxygen is needed to be additionally added into the raw gas, so that the regeneration period of the adsorption procedure is effectively prolonged; a deoxidizer has high adsorption capacity for the oxygen, the water and the carbon dioxide, and therefore, the operation cost of a purifier is reduced.

Description

technical field [0001] The invention relates to the purification of bulk gases used in the field of semiconductor chip manufacturing, in particular to a purification system for nitrogen, argon and oxygen. technical background [0002] The demand for nitrogen, argon, oxygen and other bulk gases in the semiconductor chip manufacturing process mainly comes from cryogenic air separation, in which the content of oxygen, water, carbon dioxide, carbon monoxide, hydrogen and non-methane hydrocarbons as impurities is at the ppm level, and the chip In the manufacturing process, the content of various impurities is generally required to be below 1ppb, so further purification of the bulk gas is required to meet the process requirements. [0003] In the current adsorption process purification, only oxygen, water, and carbon dioxide can be removed. If carbon monoxide, hydrogen, methane and non-methane hydrocarbons need to be further removed, a catalytic oxidation process needs to be added...

Claims

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Application Information

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IPC IPC(8): C01B21/04C01B13/02C01B23/00
Inventor 侯鹏李文强田维峰李文豪皮山丹张文刚李世海
Owner 大连华邦化学有限公司
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