Anti-sintering long-life double-layer gradient columnar structure thermal barrier coating and preparation method thereof
A technology of columnar structure and thermal barrier coating, applied in coating, metal material coating process, pressure inorganic powder coating, etc., can solve the problem of affecting the service life of the coating, reducing the strain tolerance of the coating, and reducing the thermal insulation function and other problems, to achieve the effect of rapid realization of engineering application, reduction of cracking driving force, and enhancement of fracture toughness
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Embodiment 1
[0048] see figure 1 and figure 2 As shown, the preparation method of the present invention is described by taking the heat insulation layer 4 as an example with three sublayers.
[0049] The invention provides a method for preparing a sintering-resistant long-life double-layer gradient columnar structure thermal barrier coating, which comprises the following steps:
[0050] In step 1, a metal bonding layer 2 with a thickness of 150 μm is prepared on the surface of the cylindrical superalloy substrate 1 by a low-pressure plasma spraying process. The material of the metal bonding layer 2 is spherical NiCoCrAlTaY powder with a particle size of 10 μm to 40 μm.
[0051] Step 2. On the metal bonding layer 2, 8YSZ smelting and crushing powder with a particle size of 5 μm to 25 μm is used to prepare a toughening layer 3 with a thickness of 150 μm by atmospheric plasma spraying. In the process of spraying, in order to make the interlayer bonding rate of the first sheet unit 6 not lo...
Embodiment 2
[0072] The difference between this embodiment and embodiment 1 is that in step 1, the thermal spraying method used is vacuum plasma spraying, supersonic flame spraying or cold spraying.
Embodiment 3
[0074] The difference between this embodiment and embodiment 1 is that in step 1, the thickness of the metal bonding layer 2 is 100 μm; in step 2, during the deposition process, the substrate 1 is preheated to 300°C; In step 5, the temperature of the substrate 1 is controlled to not exceed 180° C. during the deposition process.
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