Recovery of waste graphite crucibles and high-purity carbon powder
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICC CO LTD
- Publication Date
- 2019-05-21
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Abstract
Description
Technical field
[0001] The application relates to the recycling of waste graphite crucibles and high-purity carbon powder, and belongs to the field of semiconductor materials. Background technique
[0002] As one of the most important third-generation semiconductor materials, silicon carbide single crystal is widely used in civil lighting and screens due to its wide band gap, strong resistance to voltage breakdown, high thermal conductivity, and high saturated electron migration rate. Display, aerospace, high-temperature radiation environment, petroleum exploration, radar communication and automotive electronics and other fields. Silicon carbide single crystals are usually prepared from silicon carbide powders by sublimation. Therefore, the purity, particle size, and crystal form of silicon carbide powders used in sublimation have significant effects on the quality of silicon carbide single crystals.
[0003] The most commonly used SiC powder synthesis method in production at pres...