Preparation method of gan microrod array/graphene field emission cathode composite material
A technology for emitting cathodes and composite materials, which is applied in the manufacture of cold cathodes, electrode systems, and discharge tubes/lamps. etc. to achieve the effects of good field emission stability, low cost and simple preparation process
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[0025]The present invention provides a method of producing a GaN micron rod array / grapie field emission cathode composite material, and the specific steps are as follows:
[0026]Step 1, use the JFC-1600 ion sputtering coating instrument, in the vacuum is 8 × 10-3In the case of Pa, the sputter current is 40-60 mA, the sputtering time is 40-80s, and the silicon substrate is plated, and the silicon substrate sputtered over the platinum film is placed in the stone boat, the coating face, Then push the quartz boat into the tube thermostatic zone, annealing the silicon substrate, setting an annealing temperature of 800-1200 ° C, the ammonia flow is 50-200sccm, the annealing time is 5-30 min, the furnace is warmed before heating 20min nitrogen is used to remove air in the coshe, and then heat up to 800-1200 ° C for an annealing treatment at a temperature rise rate of 10 ° C per minute, and naturally cooled to room temperature after annealing. Get the substrate a;
[0027]Step 2, the substrate...
Embodiment 1
[0033]A method of preparing a GaN micron rod array / graphite emitting cathode composite material, the specific steps are as follows:
[0034]Step 1, use the JFC-1600 ion sputtering coating instrument, in the vacuum is 8 × 10-3In the case of Pa, the sputter current is 40 mA, the sputtering time is 40s, plated with a platinum plating film of the silicon substrate, put the silicon substrate sputtered over the platinum film into the stone boat, the coating face, then put the quartz boat Push into the tubular furnace constant temperature zone, annealing the silicon substrate, setting an annealing temperature of 800 ° C, the ammonia gas flow is 50sccm, the annealing time is 5 min, the furnace is warmed to heat 20 min nitrogen to remove air in the cos Then, then heated to 800 ° C to 800 ° C for an annealing treatment at a temperature rise rate per minute, and naturally cooled to room temperature after annealing, obtaining a substrate A;
[0035]Step 2, the substrate A obtained in step 1 is move...
Embodiment 2
[0038]A method of preparing a GaN micron rod array / graphite emitting cathode composite material, the specific steps are as follows:
[0039]Step 1, use the JFC-1600 ion sputtering coating instrument, in the vacuum is 8 × 10-3In the case of PA, the sputter current is 60 mA, the sputtering time is 80s, plated with a platinum plating film on the silicon substrate, put the silicon substrate of the platinum film into the stone boat, the coating face, then put the quartz boat Push into the tubular furnace constant temperature zone, annealing the silicon substrate, setting an annealing temperature of 1200 ° C, the ammonia gas flow is 200 sccm, the annealing time is 30 min, the furnace is warmed to heat 20 min nitrogen gas to remove air in the tube Then, then heated to 1200 ° C for an annealing treatment at a temperature rise rate of 10 ° C per minute, and naturally cooled to room temperature after annealing. Get the substrate a;
[0040]Step 2, the substrate A obtained in step 1 is moved into ...
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