Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing ZnFe2O4/Fe2O3 three-dimensional heterojunction nano-material by magnetron sputtering

A technology of magnetron sputtering and nanomaterials, applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problems of low specific surface area and inability to obtain catalytic effect, and achieve low cost and improved Photocatalytic performance, wide application effect

Active Publication Date: 2019-06-04
SOUTHWEST JIAOTONG UNIV
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the two-dimensional growth characteristics of physical vapor deposition, it is generally used to prepare dense films. In the process of photocatalytic reaction, due to its low specific surface area, it often cannot obtain excellent catalytic effect.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing ZnFe2O4/Fe2O3 three-dimensional heterojunction nano-material by magnetron sputtering
  • Method for preparing ZnFe2O4/Fe2O3 three-dimensional heterojunction nano-material by magnetron sputtering
  • Method for preparing ZnFe2O4/Fe2O3 three-dimensional heterojunction nano-material by magnetron sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0027] A kind of magnetron sputtering to prepare ZnFe 2 O 4 / Fe 2 O 3 The method of three-dimensional heterojunction nanomaterials is based on magnetron sputtering technology. In a closed environment, Fe and ZnO are used as targets respectively, and quartz sheets are used as substrates, and the angle between the substrate and the horizontal plane is adjusted to 0°~5° , adjust the distance between the ZnO target and the substrate to 9cm ~ 10cm, adjust the distance between the Fe target and the substrate to 12cm ~ 13cm, and then vacuumize the airtight environment, and reduce the air pressure in the airtight environment to 2×10 -4 At Pa, argon gas was introduced into the airtight environment as sputtering gas; then the air pressure in the airtight environment was controlled to be 0.15Pa ~ 0.2Pa, and then the Fe target was sputtered by a DC sputtering source, and the ZnO target was sputtered by a radio frequency sputtering source. For sputtering, the Fe target and the ZnO targe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a ZnFe2O4 / Fe2O3 three-dimensional heterojunction nano-material by magnetron sputtering. In a closed environment, Fe and ZnO are taken as target materials, and vacuumized in the closed environment; and when the air pressure in the closed environment is reduced to 2*10<-4>MPa, argon is introduced into the closed environment to serve as sputtering gas;the air pressure of the closed environment is controlled to be 0.15Pa to 0.2Pa, a Fe target material is sputtered through a direct-current sputtering source, the ZnO target material is sputtered by aradio frequency sputtering source, magnetron sputtering is carried out on the Fe target material and the ZnO target material at the same time, and after sputtering is completed, the product is taken out in a muffle furnace for high-temperature annealing treatment to obtain ZnFe2O4 / Fe2O3 three-dimensional heterojunction nano material. The material prepared by the preparation method has a heterogeneous three-dimensional composite nano structure, so that the reaction surface area and the photoelectric catalytic performance of a composite material are effectively improved, and the method can be widely applied to the field of photocatalytic oxidation reduction.

Description

technical field [0001] The invention relates to the technical field of photoelectric catalytic materials, in particular to a method for preparing ZnFe by magnetron sputtering 2 O 4 / Fe 2 O 3 Methods for three-dimensional heterojunction nanomaterials. Background technique [0002] In recent years, in the field of photocatalysis, photocatalytic materials can absorb solar energy to carry out redox reactions to degrade pollutants, produce hydrogen, etc., and have good application prospects in the fields of environmental pollution and energy shortage, but the development of photocatalysts has encountered A series of problems, such as low quantum efficiency and high recombination rate of photogenerated electron-hole pairs. Therefore, in order to improve the catalytic efficiency of photocatalytic materials, the catalytic efficiency is often improved by means of noble metal deposition, metal ion doping, adding photosensitizers, and combining with other substances. On the other ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/58
Inventor 张湉夏钰东付玉聪王红艳张勇赵勇
Owner SOUTHWEST JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com