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A method for laser grooving on the back of double-sided perc battery

A laser grooving and laser technology, used in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of aluminum paste ductility, different corrosiveness, and double-sided PERC cell efficiency differences, etc., to reduce the damage area, The effect of optimizing cell efficiency and increasing fill factor

Active Publication Date: 2021-06-04
HANWHA SOLARONE QIDONG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, different aluminum pastes on the back contain different contents of organic solvents, different proportions of aluminum content and vitreous body, and different particle sizes of aluminum, which will lead to differences in the ductility and corrosion of the aluminum paste. If the same laser slotting process is used , will lead to large differences in the efficiency of double-sided PERC cells under different aluminum pastes

Method used

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  • A method for laser grooving on the back of double-sided perc battery
  • A method for laser grooving on the back of double-sided perc battery
  • A method for laser grooving on the back of double-sided perc battery

Examples

Experimental program
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Effect test

Embodiment 1

[0032] refer to figure 2 and Figure 3-4 , a preparation method based on a double-sided PERC battery in this embodiment, specifically comprising the following steps:

[0033] Step S1: Prepare materials

[0034] Prepare silicon wafers that are clean and have completed processes such as texturing, diffusion, etching, back passivation, and anti-reflection coating.

[0035] Step S2: Laser pattern selection and setting in the back laser grooving

[0036] Put the silicon wafer in step S1 into the laser equipment, select the laser groove pattern, the dot pattern size is 154.7*154.7mm, and set the laser line spacing to 1.1907mm.

[0037] Step S3: Laser Speed ​​Setting in Back Laser Grooving

[0038] The laser speed in the laser groove step is 16000mm / s.

[0039] Step S4: Laser power percentage setting in back laser grooving

[0040] The percentage of laser power in the laser grooving step is 100%.

[0041] Step S5: Laser Frequency Setting in Back Laser Grooving

[0042] The l...

Embodiment 2

[0047] refer to figure 2 and Figure 7-8 , a preparation method based on laser grooving on the back of a double-sided PERC battery in this embodiment, specifically includes the following steps:

[0048] Step S1: Prepare materials

[0049] Prepare silicon wafers that are clean and have completed processes such as texturing, diffusion, etching, back passivation, and anti-reflection coating.

[0050] Step S2: Laser pattern selection and setting in the back laser grooving

[0051] Put the silicon wafer in step S1 into the laser equipment, select the laser groove pattern, the dot pattern size is 154.7*154.7mm, and set the laser line spacing to 1.1907mm.

[0052] Step S3: Laser Speed ​​Setting in Back Laser Grooving

[0053] The laser speed in the laser groove step is 16000mm / s.

[0054] Step S4: Laser power percentage setting in back laser grooving

[0055] The percentage of laser power in the laser grooving step is 100%.

[0056] Step S5: Laser Frequency Setting in Back La...

Embodiment 3

[0077] refer to figure 2 and Figure 9-10 , a preparation method based on a double-sided PERC battery in this embodiment, specifically comprising the following steps:

[0078] Step S1: Prepare materials

[0079] Prepare silicon wafers that are clean and have completed processes such as texturing, diffusion, etching, back passivation, and anti-reflection coating.

[0080] Step S2: Laser pattern selection and setting in the back laser grooving

[0081] Put the silicon wafer in step S1 into the laser equipment, select the laser groove pattern, the dot pattern size is 154.7*154.7mm, and set the laser line spacing to 1.1907mm.

[0082] Step S3: Laser Speed ​​Setting in Back Laser Grooving

[0083] The laser speed in the laser groove step is 16000mm / s.

[0084] Step S4: Laser power percentage setting in back laser grooving

[0085] The percentage of laser power in the laser grooving step is 100%.

[0086] Step S5: Laser Frequency Setting in Back Laser Grooving

[0087] The ...

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Abstract

The invention discloses a method suitable for laser grooving on the back of a double-sided PERC battery. The method is to set laser parameters according to different ductile and corrosive aluminum pastes in the laser grooving step, so that the laser pattern is consistent with the aluminum paste Matching; the laser parameters include laser speed, laser power percentage and laser frequency, and the laser pattern includes the distance between laser points and laser points, which are separated, tangent or intersected; the aluminum paste with strong ductility and corrosion is matched The distance between the laser points and the laser points is a laser pattern; the aluminum paste in the extension and corrosion is matched with the laser pattern in which the distance between the laser points and the laser points is tangent; The laser dots and the dot spacing between the laser dots are intersecting laser graphics. The method of the present invention can match different laser grooving processes according to the ductile corrosion performance of different aluminum pastes, exert the optimal performance of the pastes, and improve the efficiency of double-sided PERC cells.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a method suitable for laser grooves on the back of crystalline silicon solar double-sided PERC cells. Background technique [0002] With the continuous development of photovoltaic technology, crystalline silicon solar cells have developed rapidly as a clean energy product that converts solar energy into electrical energy. [0003] With the increasingly fierce competition in the photovoltaic industry, improving efficiency and reducing costs have become the two main directions for the development of the photovoltaic industry. PERC technology increases efficiency by adding a dielectric passivation layer on the back of the cell. The PERC battery maximizes the potential gradient across the PN junction, making the flow of electrons more stable and reducing electron recombination, thereby achieving higher battery efficiency. At present, PERC batteries have gradually r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 张金花费存勇赵福祥崔钟亨李懋鸿
Owner HANWHA SOLARONE QIDONG