A method for laser grooving on the back of double-sided perc battery
A laser grooving and laser technology, used in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of aluminum paste ductility, different corrosiveness, and double-sided PERC cell efficiency differences, etc., to reduce the damage area, The effect of optimizing cell efficiency and increasing fill factor
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Embodiment 1
[0032] refer to figure 2 and Figure 3-4 , a preparation method based on a double-sided PERC battery in this embodiment, specifically comprising the following steps:
[0033] Step S1: Prepare materials
[0034] Prepare silicon wafers that are clean and have completed processes such as texturing, diffusion, etching, back passivation, and anti-reflection coating.
[0035] Step S2: Laser pattern selection and setting in the back laser grooving
[0036] Put the silicon wafer in step S1 into the laser equipment, select the laser groove pattern, the dot pattern size is 154.7*154.7mm, and set the laser line spacing to 1.1907mm.
[0037] Step S3: Laser Speed Setting in Back Laser Grooving
[0038] The laser speed in the laser groove step is 16000mm / s.
[0039] Step S4: Laser power percentage setting in back laser grooving
[0040] The percentage of laser power in the laser grooving step is 100%.
[0041] Step S5: Laser Frequency Setting in Back Laser Grooving
[0042] The l...
Embodiment 2
[0047] refer to figure 2 and Figure 7-8 , a preparation method based on laser grooving on the back of a double-sided PERC battery in this embodiment, specifically includes the following steps:
[0048] Step S1: Prepare materials
[0049] Prepare silicon wafers that are clean and have completed processes such as texturing, diffusion, etching, back passivation, and anti-reflection coating.
[0050] Step S2: Laser pattern selection and setting in the back laser grooving
[0051] Put the silicon wafer in step S1 into the laser equipment, select the laser groove pattern, the dot pattern size is 154.7*154.7mm, and set the laser line spacing to 1.1907mm.
[0052] Step S3: Laser Speed Setting in Back Laser Grooving
[0053] The laser speed in the laser groove step is 16000mm / s.
[0054] Step S4: Laser power percentage setting in back laser grooving
[0055] The percentage of laser power in the laser grooving step is 100%.
[0056] Step S5: Laser Frequency Setting in Back La...
Embodiment 3
[0077] refer to figure 2 and Figure 9-10 , a preparation method based on a double-sided PERC battery in this embodiment, specifically comprising the following steps:
[0078] Step S1: Prepare materials
[0079] Prepare silicon wafers that are clean and have completed processes such as texturing, diffusion, etching, back passivation, and anti-reflection coating.
[0080] Step S2: Laser pattern selection and setting in the back laser grooving
[0081] Put the silicon wafer in step S1 into the laser equipment, select the laser groove pattern, the dot pattern size is 154.7*154.7mm, and set the laser line spacing to 1.1907mm.
[0082] Step S3: Laser Speed Setting in Back Laser Grooving
[0083] The laser speed in the laser groove step is 16000mm / s.
[0084] Step S4: Laser power percentage setting in back laser grooving
[0085] The percentage of laser power in the laser grooving step is 100%.
[0086] Step S5: Laser Frequency Setting in Back Laser Grooving
[0087] The ...
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