CeO2 grinding disc for grinding semiconductor materials and preparation technology thereof

Abstract

The invention relates to a CeO2 grinding disc for grinding semiconductor materials and a preparation technology thereof. The preparation technology comprises the following steps: S1, adopting the hightemperature smelting method to prepare CeO2 grinding disc forming material; S2, forming the CeO2 grinding disc; S3, solidifying the formed CeO2 grinding disc green body; S4, sintering the CeO2 grinding disc; and S5, processing the CeO2 grinding disc. The preparation technology has the following benefits: CeO2 abrasive material in the grinding disc is separated out in situ from parent body glass phase during the grinding disc sintering process, is fine and uniform in size and avoids the agglomeration phenomenon in grinding disc distribution; the binding phase of the CeO2 abrasive material in the grinding disc is the glass phase; compared with a resin CeO2 grinding disc, the elasticity modulus is high; the CeO2 grinding disc is unlikely to generate elastic deformation for carrying out planegrinding on a monocrystalline silicon chip, the ground monocrystalline silicon chip is high in straightness, and the straightness error is less than 1 micron / cm; the glass phase in the grinding discis the soft glass phase with a special formula; and during the monocrystalline silicon chip grinding process, the surface of the monocrystalline silicon chip is not scratched, and the surface qualityof the processed monocrystalline silicon chip is high.

Description

technical field [0001] The invention relates to a CeO for grinding semiconductor materials 2 Grinding disc and its preparation process, in particular to a kind of CeO precipitated in glass phase with glass as bonding phase 2 The invention discloses a grinding disc for grinding abrasives and a preparation process thereof, which belong to the field of grinding tool preparation. Background technique [0002] CeO 2 Grinding discs are widely used in precision grinding of optical lenses, glass mobile phone screens, and semiconductor materials represented by single crystal silicon materials because of their high grinding efficiency and good surface finish and brightness after grinding. Currently CeO 2 The general preparation process of the grinding disc is to use CeO 2 After the powder is mixed with the resin, the resin is cured under certain conditions to form CeO with a certain strength. 2 Resin disc. The grinding disc prepared by this process has high strength, good chemic...

AI Technical Summary

Problems solved by technology

However, when the single crystal silicon wafer material is polished with this grinding disc, under the action of the grinding load, due to the elasticity of the resin, the resin grinding disc will have a small amount of deformation during the polishing process, which makes the straightness of the polished silicon wafer material It is difficult to be lower than 1μm / cm, which cannot meet the dimensional accuracy requirements of the subsequent photoetching process of single crystal silicon wafers

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