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High-barrier high-thermal-conductivity packaging structure for flexible OLED display and preparation method thereof

A packaging structure and display technology, which is applied in semiconductor/solid-state device manufacturing, identification devices, semiconductor devices, etc., can solve problems such as poor heat dissipation performance, achieve excellent barrier performance, prevent aging, and improve the effect of heat conduction rate

Active Publication Date: 2019-06-21
SUZHOU SIDIKE NEW MATERIALS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the defect that the existing OLED device packaging structure only unilaterally improves the barrier performance of water and oxygen, thereby making the heat dissipation performance poor, thereby providing a high barrier and high thermal conductivity packaging structure and the package Preparation method of the structure

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  • High-barrier high-thermal-conductivity packaging structure for flexible OLED display and preparation method thereof
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Experimental program
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Effect test

Embodiment 1

[0040] This embodiment provides a flexible OLED display with high barrier and high thermal conductivity packaging structure, such as figure 1 As shown, it consists of an inorganic passivation layer 1 and a composite buffer layer 2. In order to improve the water and oxygen barrier performance of OLED devices and improve the flatness of the film-forming substrate, it is necessary to alternately stack at least two inorganic passivation layers 1 and at least one composite buffer layer 2, and the ratio of the number of inorganic passivation layers 1 to The composite buffer layer 2 has one more layer, so that the outermost layer of the packaging structure is the inorganic passivation layer 1 . Wherein, the number of layers of the inorganic passivation layer 1 is 5 layers, and the number of layers of the composite buffer layer 2 is 4 layers.

[0041] The luminous efficiency of OLED devices cannot reach 100% during operation, and a large part of the electric energy is converted into ...

Embodiment 2

[0050] This embodiment provides a method for preparing the packaging structure as in Embodiment 1, including:

[0051] (1) Preparation of the first inorganic passivation layer

[0052] Specifically, a flexible substrate containing an OLED display layer is provided, and the first inorganic passivation layer is formed on the flexible substrate and the OLED display layer by chemical vapor deposition, and the film-forming temperature of the first inorganic passivation film layer is 115°C. The thickness of the film is 1 μm, which protects various functional materials of the OLED display layer.

[0053] (2) Prepare the first layer of composite buffer layer

[0054] Specifically, the graphene oxide fiber, the first organic material, the second organic material and the solvent dimethyl sulfoxide are mixed according to a mass ratio of 1:0.3:60:350 and then spin-coated on the first layer of inorganic material in step (1). On the passivation layer, bake at 140° C. for 20 minutes to for...

Embodiment 3

[0063] The present invention provides a high-barrier and high-thermal-conduction packaging structure for flexible OLED displays. Unlike Embodiment 1, the number of layers of the composite buffer layer 2 can also be set to 1 layer, 2 layers, or 3 layers. Correspondingly, the inorganic passivation layer The number of layers of 1 is set to 2 layers, 3 layers, or 4 layers, as long as the number of layers of the inorganic passivation layer 1 is one more than the number of layers of the composite buffer layer 2 so that the outermost layer of the packaging structure is the inorganic passivation layer 1 That's it.

[0064] As a further modification of an alternative embodiment, the thickness of the composite buffer layer 2 can be set to 4 μm, 5 μm, 7 μm, or 8 μm, and the thickness of each composite buffer layer 2 can be the same or different;

[0065] The thickness of the inorganic passivation layer 1 can also be set to 0.5 μm, 0.65 μm, 0.95 μm, etc., and the thickness of each inorgan...

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Abstract

The invention belongs to the technical field of display, and particularly relates to a high-barrier high-thermal-conductivity packaging structure for flexible OLED display and a preparation method thereof. The packaging structure provided by the invention comprises an inorganic passivation layer and a composite buffer layer which are alternately stacked, wherein the composite buffer layer comprises a heat conduction silk screen layer and an organic layer embedded in the heat conduction silk screen layer; and the heat conduction silk screen layer is exposed on the surface of the organic layer and is attached to the inorganic passivation layer. All layers in the packaging structure of the structure are alternately stacked, so that the structure is excellent in barrier property for water andoxygen; the heat conduction silk screen layer improves the heat conduction rate of the packaging structure, the heat dissipation of the OLED device is facilitated, the increasing of the degradation rate of the OLED device material is avoided, and the service life of the OLED device is prolonged. According to the preparation method provided by the invention, the composite buffer layers with different layers are prepared at different temperatures, and the thickness of the composite buffer layer is larger than that of the inorganic passivation layer, so that various functional materials of the OLED display layer are protected, and the compactness of the inorganic passivation layer is also improved.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a high barrier and high thermal conductivity packaging structure for flexible OLED display and a preparation method thereof. Background technique [0002] Organic Light-Emitting Diode (OLED) is an active light-emitting device, which has the advantages of high contrast, wide viewing angle, low power consumption, thin volume, etc., and is expected to become the mainstream flat panel display technology of the next generation. The most attractive thing about organic light-emitting diodes is that they can be flexible. Specifically, organic light-emitting diodes are fabricated on flexible polymer substrates, such as polyethylene (PE), polypropylene (PP), polystyrene (PS), and polystyrene (PS). Ether sulfone (PES), polyethylene terephthalate (PEN), polyimide (PI), etc., so that the OLED device can be bent and rolled into any shape. [0003] However, OLED devices are very s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/56G09F9/30H01L27/32
Inventor 金闯张庆杰
Owner SUZHOU SIDIKE NEW MATERIALS SCI & TECH
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