Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of visible light cutting film, its preparation method and application

A technology of visible light and absorbing film, which is applied in the field of optical film, can solve the problems of poor cut-off effect of visible light and achieve good visual effect

Active Publication Date: 2021-08-10
ZHANGJIAGANG KANGDE XIN OPTRONICS MATERIAL
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a visible light cut-off film, its preparation method and application, to solve the problem that the visible light cut-off film in the prior art has poor cut-off effect on visible light

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of visible light cutting film, its preparation method and application
  • A kind of visible light cutting film, its preparation method and application
  • A kind of visible light cutting film, its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0051] In another typical embodiment of the present application, a method for preparing any of the above-mentioned visible light cut-off films is provided, the preparation method comprising: Step S1, setting a high refractive index material layer 21 on the substrate layer 10; Step S2 , setting the matching material layer 22 on the high refractive index material layer 21; and optionally repeating step S3 one or more times, setting the high refractive index material layer 21 on the matching material layer 22, and setting Matching material layer 22 .

[0052] Since the high refractive index material layer 21 of the present application has a refractive index of 3 to 5.5, it has good absorptivity to ultraviolet light and visible light; and it is matched with the matching material layer 22 to form a structural water Layer 23, the refractive index of the structured water layer 23 is similar to that of water and is about 1.3, so it can form a thin film interference with the high refra...

Embodiment 1

[0063] The film structure of the visible light cut-off film in this embodiment is Air|1.376L1.795H|Sub|5.003H0.236L|Air, wherein: Sub is the substrate layer, Air is air; H is the α-hydrogenated amorphous silicon layer, and the refraction The refractive index is 4.306; L is a silicon dioxide layer with a refractive index of 1.470, which can be referred to figure 1 .

[0064] The above-mentioned visible light cut-off film was prepared by vacuum magnetron sputtering method:

[0065] (1) Forming a hydrogenated amorphous silicon layer on the substrate

[0066] The substrate is strictly cleaned before use: soak in standard washing solution (saturated potassium permanganate solution of sulfuric acid) for 24 hours; then, ultrasonically clean with toluene, acetone and ethanol for 15 minutes respectively, and rinse repeatedly with deionized water; finally , and store the cleaned substrate in analytically pure ethanol in the dark until use.

[0067] Using the TXZ500-2 radio frequency ...

Embodiment 2

[0073] The above-mentioned visible light cut-off film was prepared by PECVD method:

[0074] (1) Forming a hydrogenated amorphous silicon layer on the substrate

[0075] Using 4% silane diluted with high-concentration hydrogen as the reaction gas source of the plasma chemical vapor deposition (PECVD) process, when the vacuum reaches 1.0×10 -4 At Pa, the film was deposited on a K9 glass substrate with a thickness of 1.1 mm, the frequency of the radio frequency power supply was 13.56 MHz, and the gas flow rate was 20 sccm during the reaction. Amorphous silicon thin film at lower gas pressure (10Pa) and power density (30mW / cm 2 ) deposition, the RF electrode temperature was kept constant at 150°C, and the substrate temperature was controlled at 200°C. The RM2000 laser Raman spectrometer used in the measurement was used to observe the hydrogenated amorphous silicon layer, and the SE850 spectroscopic ellipsometer was used to measure its thickness.

[0076] (2) Forming a silicon ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a visible light cut-off film, its preparation method and application. The visible light cut-off film includes: a substrate layer; an absorbing film system, including one or more absorbing units, the absorbing units are arranged on one or two opposite surfaces of the substrate layer, and each absorbing unit includes a high refractive index material layer and a For the matching material layer arranged in contact, the high refractive index material layer has a refractive index of 3-5.5, and the high refractive index material layer and the matching material layer form a structured water layer at the contact interface. Since the high refractive index material layer of the present application has a refractive index of 3 to 5.5, it has good absorption of ultraviolet light and visible light; and it is matched with the matching material layer to form a structured water layer at the contact interface between the two, The refractive index of the structured water layer is similar to that of water, about 1.3, so it can form a thin film interference with the high refractive index material layer on visible light, thereby forming an ideal cut-off effect on ultraviolet light and visible light, and making ideal infrared light transmittance.

Description

technical field [0001] The invention relates to an optical film, in particular to a visible light cut-off film, its preparation method and application. Background technique [0002] The development of science and technology has higher and higher requirements on materials, and the advent of a new material will have a huge impact on society. Considering that the acquisition of new materials is generally not easy and expensive, it is meaningful to study thin film materials attached to the surface of the substrate. Thin film materials can be regarded as surface materials, which are generally very thin. Therefore, the preparation and characterization methods of thin film materials are closely related to the research on the surface of materials. Thin film materials not only have superior mechanical and thermal properties, but also have specific functions such as optoelectronics, piezoelectricity, and magnetism, and have low cost, so they are widely used in production and life. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/22G02B5/28
Inventor 于甄张国臻夏振
Owner ZHANGJIAGANG KANGDE XIN OPTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com