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Perovskite film and preparation method and application thereof

A technology of perovskite and perovskite precursors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low device efficiency and unimproved stability, and achieve improved stability Effect

Pending Publication Date: 2019-06-25
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Adv.Mater.2014,26,3748-3754 discloses a method of adding additives to perovskite to promote thin film crystallization, the method is to add 1,8-diiodooctane to the precursor solution of perovskite In order to obtain a smooth film, the disadvantage is that the efficiency of the device prepared by this method is not high, and the stability has not been improved

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  • Perovskite film and preparation method and application thereof
  • Perovskite film and preparation method and application thereof
  • Perovskite film and preparation method and application thereof

Examples

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Embodiment 1

[0048] Preparation of perovskite thin films and solar cells without additives:

[0049] Iodomethylamine (159mgCH 3 NH 3 I) and lead iodide (461mgPbI 2 ) was dissolved in N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with a total volume content of 1ml, the volume ratio of the two was kept at 3:7, and stirred at 60°C for 2 hours. The perovskite precursor solution obtained above is spin-coated on the electron transport layer, which is divided into two steps for spin coating. In the first step, the rotation speed of spin coating is 1000rpm, and it is kept for 10 seconds. In the second step, the rotation speed of spin coating is 4000rpm, and it is kept for 40 seconds. Seconds, and drop toluene at the 20s of the second step of spin coating; put it on a hot stage at 90°C for half an hour, then spin-coat Spiro-OMeTAD on the perovskite film at 5000rpm for 30s, and finally evaporate 60nm gold Electrode, the battery is prepared.

Embodiment 2

[0051] Preparation of perovskite film and solar cell with additive 1:

[0052] Iodomethylamine (159mg CH 3 NH 3 I) and lead iodide (461mg PbI 2 ) is dissolved in N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with a total volume of 1ml, and the volume ratio of the two is kept at 3:7. Additive C with a total mass ratio of 5% 4 h8 I 2 Added to the above precursor solution, stirred at 60°C for 2 hours. The perovskite precursor solution obtained above is spin-coated on the electron transport layer, which is divided into two steps for spin coating. In the first step, the rotation speed of spin coating is 1000rpm, and it is kept for 10 seconds. In the second step, the rotation speed of spin coating is 4000rpm, and it is kept for 40 seconds. Seconds, and drop toluene at the 20s of the second step of spin coating; put it on a hot stage at 90°C for half an hour, then spin-coat Spiro-OMeTAD on the perovskite film at 5000rpm for 30s, and finally evaporate 60nm gold The e...

Embodiment 3

[0054] Preparation of perovskite thin film and solar cell with additive 2:

[0055] Iodomethylamine (159mg CH 3 NH 3 I) and lead iodide (461mg PbI 2 ) is dissolved in N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with a total volume of 1ml, and the volume ratio of the two is kept at 3:7. Additive C with a total mass ratio of 5% 4 f 8 I 2 Added to the above precursor solution, stirred at 60°C for 2 hours. The perovskite precursor solution obtained above is spin-coated on the electron transport layer, which is divided into two steps for spin coating. The first step is spin coating at a speed of 1000 rpm for 10 seconds, and the second step is spin coating at a speed of 4000 rpm. Turn per minute, hold for 40 seconds, and add toluene dropwise at the 20th second step of spin coating; put it on a hot stage at 90°C for half an hour, and then spin-coat Spiro-OMeTAD on the perovskite film at 5000rpm for 30s , and finally vapor-deposit a 60nm gold electrode, and the ba...

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Abstract

The invention provides an efficient and stable perovskite film and a preparation method and an application thereof, and relates to the field of solar cells. Additive is added into perovskite precursorsolution, and the additive is one or more iodides selected from iodides shown in formula (1): C4H<n>X<8-n>I2 (1), wherein X is F or Cl, and n is an integer of 0 to 8, such as 0, 1, 2, 3, 4, 5, 6, 7 or 8. Finally, a compact, efficient and stable perovskite film is prepared. After the perovskite film is made into a solar cell, the efficiency of the solar cell is greatly improved, and the efficiencyis very stable and can be maintained at more than 80% of the initial efficiency after two months of outdoor storage. The simple and effective method provides a possibility for the exploration of thepractical application of the perovskite solar cell.

Description

technical field [0001] The invention relates to the technical field of perovskite solar cells, in particular to a perovskite thin film and its preparation method and application. Background technique [0002] As the most abundant renewable energy in the world, solar energy is inexhaustible, clean, safe and non-polluting, and has become an ideal solution to environmental pollution. One way to efficiently use solar energy is to make solar cells. Organic-inorganic hybrid perovskite (its structure is ABX 3 , A represents organic cations, B represents Pb, Cd or Sn elements, and X represents halogen elements) solar cells have become a new star in the field of solar cells in recent years. This type of perovskite has a wide light absorption range, high extinction coefficient and wide band gap Since the first application of dye-sensitized solar cells in 2009, its photoelectric conversion efficiency has increased from 3.8% to 22.1% in just a few years. [0003] In the process of pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549
Inventor 周惠琼毕世青
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA