Gas sensor device, preparation method thereof and application

A gas sensor and gas-sensitive technology, applied in the field of gas sensing and sensing, can solve the problem of low sensitivity and achieve the effect of high-sensitivity sensing

Inactive Publication Date: 2019-07-02
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Existing gas sensors usually include semiconductor gas sensors, contact combustion gas sensors and electrochemical gas sensors, etc., which have the problem of low sensitivity

Method used

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  • Gas sensor device, preparation method thereof and application
  • Gas sensor device, preparation method thereof and application
  • Gas sensor device, preparation method thereof and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) On a silicon wafer with a thermally oxidized silicon dioxide film on the surface (the thickness of the silicon dioxide layer is 100-500nm), using a chemical vapor deposition method at 800-1100°C, using methane and hydrogen as reaction gases, Use argon as the carrier gas and deposit for 20 minutes to prepare graphene films with nanocrystalline structures;

[0036] (2) By spin-coating the nanocrystalline graphene film produced in step (1), 100-800nm ​​thick electron beam sensitive photoresist is spin-coated, and the photoresist is removed by baking at 180°C for 60 seconds. Solvent, and then through electron beam direct writing, combined with oxygen plasma etching method, cut out a 5μm×5μm area on the continuous nanocrystalline graphene film to form graphene islands (that is, the gas-sensitive center section);

[0037] (3) The electrode is prepared by metal evaporation method (i.e. Figure 1a The grid area is shown): Coating photoresist (polymethyl methacrylate, PMMA) with ...

Embodiment 2

[0047] (1) On a silicon wafer with a thermally oxidized silicon dioxide film on the surface (the thickness of the silicon dioxide layer is 100-500nm), using a chemical vapor deposition method at 800-1100°C, using methane and hydrogen as reaction gases, Use argon as the carrier gas and deposit for 20 minutes to prepare graphene films with nanocrystalline structures;

[0048] (2) By spin-coating the nanocrystalline graphene film produced in step (1), 100-800nm ​​thick electron beam sensitive photoresist is spin-coated, and the photoresist is removed by baking at 180°C for 60 seconds. Solvent, and then through electron beam direct writing, combined with oxygen plasma etching method, cut out a 5μm×5μm area on the continuous nanocrystalline graphene film to form graphene islands (that is, the gas-sensitive center Part), and then cut the graphene island into mutually parallel strips, the width of the strip is 1 μm, and the distance between the two strips is 1 μm;

[0049] (3) The electr...

Embodiment 3

[0056] (1) On a silicon wafer with a thermally oxidized silicon dioxide film on the surface (the thickness of the silicon dioxide layer is 100-500nm), using a chemical vapor deposition method at 800-1100°C, using methane and hydrogen as reaction gases, Use argon as the carrier gas and deposit for 20 minutes to prepare graphene films with nanocrystalline structures;

[0057] (2) By spin-coating the nanocrystalline graphene film produced in step (1), 100-800nm ​​thick electron beam sensitive photoresist is spin-coated, and the photoresist is removed by baking at 180°C for 60 seconds. Solvent, and then through electron beam direct writing, combined with oxygen plasma etching method, cut out a 5μm×5μm area on the continuous nanocrystalline graphene film to form graphene islands (that is, the gas-sensitive center Part), and then cut the graphene island into mutually parallel strips, the width of the strip is 1 μm, and the distance between the two strips is 1 μm;

[0058] (3) The electr...

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Abstract

The invention provides a gas sensor device, a preparation method thereof and application. The gas sensor device comprises a central portion sensitive to a gas and a sensing signal transmission portion, wherein the central portion comprises a nanocrystalline film layer material of graphene, tin disulfide or molybdenum disulfide; and current is conducted between grains of the nano film layer material through a tunneling mechanism. The gas sensor device realizes high sensitivity sensing of the gas.

Description

Technical field [0001] The invention relates to the field of sensing, in particular to the field of gas sensing, and in particular to a gas-sensing sensor device and a preparation method and application thereof. Background technique [0002] Sensing technology is a multidisciplinary modern science and engineering technology about acquiring information from natural sources, processing (transforming) and identifying it. It involves sensors (also known as transducers), information processing and recognition Planning and design, development, manufacturing / construction, testing, application, evaluation and improvement activities. [0003] Among them, the sensor is a detection device that can feel the measured information, and can transform the sensed information into electrical signals or other required forms of information output according to a certain rule, so as to meet the needs of information transmission, processing, and storage. , Display, record and control requirements. [0004...

Claims

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Application Information

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IPC IPC(8): G01N27/12G01N27/22
CPCG01N27/127G01N27/227
Inventor 唐成春顾长志杨海方李俊杰姜倩晴金爱子
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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