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Diode device and manufacturing process thereof

A manufacturing process and diode technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of low reverse withstand voltage, and achieve the effect of low on-voltage

Inactive Publication Date: 2019-07-02
BYD SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] One of the purposes of the present invention is to provide a diode device to solve the technical problem of low reverse withstand voltage of Schottky diodes in the prior art

Method used

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  • Diode device and manufacturing process thereof
  • Diode device and manufacturing process thereof
  • Diode device and manufacturing process thereof

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Experimental program
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Embodiment approach

[0054] Furthermore, please also refer to figure 1 and Figure 7-10 , as a specific embodiment of the diode device provided by the present invention, it also includes a dielectric oxide layer 9 located at one end of the P-type doped region 3, and the dielectric oxide layer 9 is arranged between the barrier layer 2 and the P-type doped region 3 space, and a part of the dielectric oxide layer 9 is exposed to the air. The arrangement of the dielectric oxide layer 9 improves the reverse withstand voltage capability of the diode device, and can prevent external foreign matter from invading into the diode device to protect the diode device.

[0055] Please also refer to Figure 1-10 , the manufacturing process of the diode device provided by the present invention will now be described. A manufacturing process for a diode device, comprising the following steps:

[0056] S1. Prepare N-type lightly doped region 4;

[0057] S2, forming a P-type doped region 3 on the N-type lightly ...

specific Embodiment approach

[0070] Further, see figure 2 , as a specific implementation of the manufacturing process of the diode device provided by the present invention, step S2 includes:

[0071] The P-type doped region 3 is formed by ion implantation on the wafer, by diffusion on the furnace tube or by vapor phase epitaxy on the N-type lightly doped region 4 .

[0072] Tight integration can be achieved between the P-type doped region 3 and the N-type lightly doped region 4 formed by ion implantation, by diffusion on the furnace tube or by vapor phase epitaxy, so that the electrons in the P-type The movement between the doped region 3 and the N-type lightly doped region 4 is more sufficient.

[0073] Specifically, the setting of the concentration of the P-type doped region 3 will enable electrons to accumulate around the oxide layer 7, and the P-type doped region 3 will also be able to form a Schottky contact with the barrier layer 2, thereby improving the efficiency of the diode device. reverse wi...

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Abstract

The invention provides a diode device. The diode device includes an oxide layer, a doped polysilicon region, and cathode metal, N-type heavily doped region, N-type lightly doped region, P-type doped region, a barrier layer and anode metal which are arranged in sequence and are electrically conductive. The invention also provides a manufacturing process of the diode device, which includes the following steps: epitaxially growing the P-type doped region on the N-type lightly doped region; inward etching from the P-type doped region to the N-type lightly doped region to form a trench region; forming the oxide layer on the surfaces of the P-type doped region and the N-type lightly doped region; filling the trench region covered with the oxide layer with doped polysilicon; and sputtering metalon the P-type doped region to form the barrier layer and depositing the anode metal on the barrier layer. In forward electrification, low on-voltage is realized by Schottky contact of the P-type dopedregion and the barrier layer. In reverse electrification, high reverse withstand voltage is realized by a PN junction formed by the P-type doped region and the N-type lightly doped region.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and more specifically relates to a diode device and a manufacturing process thereof. Background technique [0002] Schottky diodes have the characteristics of lower forward conduction and shorter reverse recovery time than ordinary diodes, and are mainly used in rectification and freewheeling circuits. [0003] Such as Figure 11 As shown, the existing Schottky diode includes: anode metal 1 , barrier layer 2 , dielectric oxide layer 9 , N-type lightly doped region 4 , N-type heavily doped region 5 and cathode metal 6 . When conducting forward conduction, the anode metal 1 applies a forward voltage. When the built-in potential of the barrier layer 2 is exceeded, the device is turned on, and most carriers participate in conduction (that is, many carriers participate in conduction), so the reverse recovery is faster. No smearing. [0004] However, the barrier structure of existing Sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/0623H01L29/0684H01L29/66143H01L29/872
Inventor 王艳春刘东庆
Owner BYD SEMICON CO LTD
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