QLED device

A technology of devices and quantum dot materials, applied in the field of QLED devices, can solve problems affecting the luminous purity and recombination efficiency of quantum dot light-emitting devices, affecting the luminous characteristics of quantum dots, etc.

Active Publication Date: 2019-07-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the electron injection ability of the electron transport layer material used in the white light quantum dot light-emitting diode device is generally stronger than the hole injection ability of the hole transport layer material, resulting in excessive electron injection causing the self-luminescence of the functional layer of the device such as the hole ...

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Examples

Experimental program
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Embodiment 1

[0034] The structure of the QLED device in this embodiment is: an ITO anode layer, a PEDOT:PSS hole injection layer, a TFB hole transport layer, a [ZnSCdSZnS] light-emitting layer, a ZnO electron transport layer and an Al cathode layer are sequentially stacked on a glass substrate.

[0035] The preparation method of the QLED device in this embodiment is as follows:

[0036] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0037] b. Spin-coat a layer of TFB film on the PEDOT:PSS layer as a hole transport layer;

[0038] c. Deposit a quantum dot light-emitting layer based on a single-band difference superlattice structure by magnetron sputtering, wherein the quantum dot light-emitting layer is a three-layer single-band difference superlattice energy level structure functional layer, including sequentially arranged ZnSCdSZnS, with a thickness of 50nm, in which, the thickness of ZnS on both sides is 5nm, and the thickness of CdS in ...

Embodiment 2

[0042] The structure of the QLED device in this embodiment is: an ITO anode layer, a PEDOT:PSS hole injection layer, a TFB hole transport layer, a [ZnSCdSZnS]2 light-emitting layer, a ZnO electron transport layer and an Al cathode layer formed sequentially on a glass substrate .

[0043] The preparation method of the QLED device in this embodiment is as follows:

[0044] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0045] b. Spin-coat a layer of TFB film on the PEDOT:PSS layer as a hole transport layer;

[0046] c. Deposit a quantum dot light-emitting layer based on a single-band difference superlattice structure by magnetron sputtering, wherein the quantum dot light-emitting layer is a six-layer single-band difference superlattice energy level structure functional layer, including sequentially arranged [ZnSCdSZnS]2, the thickness is 40nm, in which, the thickness of ZnS on both sides is 5nm, and the thickness of CdS in the ...

Embodiment 3

[0050] The structure of the QLED device in this embodiment is: an ITO anode layer, a PEDOT:PSS hole injection layer, a TFB hole transport layer, a [ZnSCdSZnS]2 light-emitting layer, a ZnO electron transport layer and an Al cathode layer formed sequentially on a glass substrate .

[0051] The preparation method of the QLED device in this embodiment is as follows:

[0052] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0053] b. Spin-coat a layer of TFB film on the PEDOT:PSS layer as a hole transport layer;

[0054] c. Deposit a quantum dot light-emitting layer based on a single-band difference superlattice structure by magnetron sputtering, wherein the quantum dot light-emitting layer is a six-layer single-band difference superlattice energy level structure functional layer, including sequentially arranged [ZnSCdSZnS]2, the thickness is 36nm, in which, the thickness of ZnS on both sides is 4nm, and the thickness of CdS in the ...

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Abstract

The present invention provides a QLED device. The device comprises a light emitting layer which is formed by stacking a blue light quantum dot material layer A and a yellow light quantum dot materiallayer B according to a [ABA]n mode, n is 1-3, the valence band difference of the blue light quantum dot material and the yellow light quantum dot material is 0, and the conduction band energy level ofthe blue light quantum dot material is at least 0.5eV higher than the conduction band energy level of the yellow light quantum dot material. A single band difference superlattice structure is introduced in a light emitting layer to improve the recombination efficiency of the quantum dots and the light emitting purification of the device so as to avoid accumulation of charges of the quantum dot layer.

Description

technical field [0001] The invention relates to the technical field of QLED devices, in particular to a QLED device. Background technique [0002] Colloidal quantum dots have considerable application prospects in the field of display devices because of their high fluorescence efficiency, good monochromaticity, adjustable emission wavelength and good stability. Quantum dot-based light-emitting diodes (Quantum dotlight-emitting diodes, QLEDs) have the advantages of better color saturation, energy-efficient color temperature, and long life, and are expected to become the mainstream technology for next-generation solid-state lighting and flat panel displays. [0003] There are relatively few reports on white light quantum dot light-emitting diode devices. One of the main structures uses quantum dots of three primary colors to emit light, that is, quantum dots of red, green, and blue are used as the three primary colors to mix and emit white light; the second uses blue phosphor a...

Claims

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Application Information

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IPC IPC(8): H01L51/50
CPCH10K50/115H10K50/13
Inventor 张珈铭曹蔚然
Owner TCL CORPORATION
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