Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

H-occupied BiVO4-OVs photocatalytic material and production method and application thereof

A photocatalytic material, 3·5H2O technology, applied in the field of photocatalytic materials, can solve the problems of photocatalytic performance reduction, short carrier diffusion length, etc.

Active Publication Date: 2019-07-09
SHAANXI UNIV OF SCI & TECH
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the short diffusion length of carriers, the photogenerated electrons and holes are easy to recombine, which reduces the photoelectrocatalytic performance and becomes the limitation of BiVO. 4 Important factor for wide application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • H-occupied BiVO4-OVs photocatalytic material and production method and application thereof
  • H-occupied BiVO4-OVs photocatalytic material and production method and application thereof
  • H-occupied BiVO4-OVs photocatalytic material and production method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] (1) Add 0.4 mmol Bi(NO 3 ) 3 ·5H 2 O was dissolved in 16 ml glycerin to obtain precursor solution A;

[0039] (2) Add 0.4 mmol NaVO 3 2H 2 O was dissolved in 16 ml deionized water to obtain precursor solution B;

[0040] (3) Add solution A to solution B and stir vigorously to obtain solution C;

[0041] (4) The solution C was transferred to a polytetrafluoroethylene-lined autoclave, and the synthetic product D was obtained after maintaining at 120 °C for 6 h;

[0042] (5) The solvothermally synthesized product D was centrifuged at 10,000 rpm, washed with deionized water and ethanol, and dried at 60 °C for 4 h to obtain product E;

[0043] (6) Product E was calcined in a muffle furnace at 300 °C for 5 h to obtain product F;

[0044] (7) The product F is in Ar / H 2 In atmosphere at 350 ℃, Ar / H 2 (Vol: 95%: 5%) annealed under atmosphere for 10 h to obtain H-occupied BiVO 4 -OVs photocatalytic materials.

[0045] The resulting H occupies the BiVO 4 -OVs photocata...

Embodiment 2

[0048] (1) Add 0.4 mmol Bi(NO 3 ) 3 ·5H 2 O was dissolved in 16 ml glycerin to obtain precursor solution A;

[0049] (2) Add 0.4 mmol NaVO 3 2H 2 O was dissolved in 16 ml deionized water to obtain precursor solution B;

[0050] (3) Add solution A to solution B and stir vigorously to obtain solution C;

[0051] (4) The solution C was transferred to a polytetrafluoroethylene-lined autoclave, and the synthetic product D was obtained after maintaining at 180 °C for 8 h;

[0052](5) The solvothermally synthesized product D was centrifuged at 10,000 rpm, washed with deionized water and ethanol, and dried at 60 °C for 4 h to obtain product E;

[0053] (6) Product E was calcined in a muffle furnace at 300 °C for 5 h to obtain product F;

[0054] (7) The product F is in Ar / H 2 In atmosphere at 350 ℃, Ar / H 2 (Vol: 95%: 5%) annealed under atmosphere for 10 h to obtain H-occupied BiVO 4 -OVs photocatalytic materials.

[0055] The resulting H occupies the BiVO 4 -OVs photocatal...

Embodiment 3

[0058] (1) Add 0.4 mmol Bi(NO 3 ) 3 ·5H 2 O was dissolved in 16 ml glycerin to obtain precursor solution A;

[0059] (2) Add 0.4 mmol NaVO 3 2H 2 O was dissolved in 16 ml deionized water to obtain precursor solution B;

[0060] (3) Add solution A to solution B and stir vigorously to obtain solution C;

[0061] (4) The solution C was transferred to a polytetrafluoroethylene-lined autoclave and kept at 180 °C for 10 h to obtain the synthetic product D;

[0062] (5) The solvothermally synthesized product D was centrifuged at 10,000 rpm, washed with deionized water and ethanol, and dried at 60 °C for 4 h to obtain product E;

[0063] (6) Product E was calcined in a muffle furnace at 300 °C for 5 h to obtain product F;

[0064] (7) The product F is in Ar / H 2 In the atmosphere at 350 ℃, Ar / H 2 (Vol: 95%: 5%) annealed under atmosphere for 10 h to obtain H-occupied BiVO 4 -OVs photocatalytic materials.

[0065] The resulting H occupies the BiVO 4 -OVs photocatalytic materi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Radius sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for producing an H-occupied BiVO4-OVs photocatalytic material and application of the H-occupied BiVO4-OVs photocatalytic material. The production method comprises thesteps of dissolving a certain molar weight of Bi(NO3)3.5 H2O in glycerin; dissolving a certain molar weight of NaVO3.2 H2O in deionized water; mixing solutions; transferring a mixed solution into a teflon-lined high-pressure kettle, and maintaining 180 DEG C for 8 h; conducting 10000-rpm centrifugal separation on a solvothermal synthesis product, washing the solvothermal synthesis product subjected to 10000-rpm centrifugal separation with deionized water and ethyl alcohol, and drying the washed solvothermal synthesis product subjected to 10000-rpm centrifugal separation at 60 DEG C for 4 h; calcining the solvothermal synthesis product, which is thoroughly washed, in a muffle furnace at 300 DEG C for 5 h; and conducting annealing on a calcined product in an Ar / H2 atmosphere at 350 DEG C for10 h to obtain the H-occupied BiVO4-OVs photocatalytic material. The H-occupied BiVO4-OVs photocatalytic material has the advantages that a photoresponse range is wide, the catalytic activity is high, the degradation rate is high, and the hydrolysis ability is high; and solar energy can be fully and effectively used.

Description

technical field [0001] The invention relates to the technical field of photocatalytic materials, in particular to a preparation of BiVO in which H occupies oxygen-containing vacancies 4 (BiVO 4 -OVs) methods and applications of photocatalytic materials. Background technique [0002] With the increasing environmental pollution and energy shortage, photocatalytic technology has the advantages of cleanness, environmental protection, low cost, and huge energy because it uses sunlight as energy input. It has attracted widespread attention of scientists and has a good development prospect. However, photocatalytic technology is still limited by two influencing factors, namely, narrow spectral response range and low quantum efficiency. Therefore, how to broaden spectral absorption, improve solar energy utilization, and suppress the rapid recombination of photogenerated electrons and holes has become a current research topic. core and key. [0003] Bismuth vanadate (BiVO 4 ) has...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J23/22C02F1/30
CPCB01J23/22C02F1/30C02F2305/10B01J35/39
Inventor 杨艳玲毕雅欣叶晓慧锁国权孙瑜邹鑫鑫和茹梅冯雷侯小江陈志刚陈华军张荔朱建锋
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com