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Ultra-UHV pressure equalizing ring and its production process

An ultra-ultra-high voltage, equalizing ring technology, applied in the field of equalizing rings, can solve problems such as potential difference and failure of equalizing rings, and achieve the effect of small material shrinkage and convenient molding

Inactive Publication Date: 2020-08-04
平顶山正植科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problem that the existing voltage equalizing ring materials are likely to cause potential difference and failure of the voltage equalizing ring under ultra-high voltage, and provides an ultra-ultra high voltage equalizing ring and its production process. Due to the use of the semiconductor material described in the present invention, The voltage equalizing ring produced has an internal electric field under ultra-high voltage, which fundamentally avoids the problem of potential difference, and the voltage equalizing ring is not easy to cause device breakdown when the voltage changes suddenly, which significantly improves the overall reliability of the equipment

Method used

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  • Ultra-UHV pressure equalizing ring and its production process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Such as figure 1 As shown, an ultra-high voltage grading ring includes a ring-shaped grading ring body 1, the grading ring body 1 is made of semiconductor materials, and the grading ring body 1 is coaxially equipped with an aluminum Ring 2, four connecting rods 3 are evenly distributed in the annular interval between the pressure equalizing ring body 1 and the aluminum ring 2, and the extension lines of the connecting rods 3 pass through the gap between the pressure equalizing ring body 1 and the aluminum ring 2 center of circle. The fixing method of the connecting rod is as follows: the outer peripheral surface of the pressure equalizing ring body 1 is provided with a mounting seat 4 for inserting the connecting rod 3 at a position corresponding to the connecting rod 3, and the connecting rod 3 The head end of the rod 3 is inserted into the mounting seat 4 , and the tail end of the connecting rod 3 is fixedly connected with the inner peripheral surface of the aluminum...

Embodiment 2

[0036] The difference between embodiment 2 and embodiment 1 is that the Al-Ag composite coating is prepared on the surface of the pressure equalizing ring body using a magnetron co-sputtering process, and the specific preparation process of the Al-Ag composite coating is as follows: The body of the equalizing ring is cleaned and dried (the specific cleaning and drying operations are as follows: sequentially sonicate in acetone for 20 minutes, in absolute ethanol for 20 minutes, in deionized water for 10 minutes, and then dry at 60°C for use), and then The direct current sputtering mode is adopted, the substrate loaded with parts rotates during sputtering, the substrate is not heated during the sputtering process, the Al target with a purity higher than 99.99% and the Ag target with a purity higher than 99.99% are used as the sputtering source, and argon is used The gas is the sputtering gas, the sputtering pressure is 0.5-1 Pa, the sputtering power of the Ag target and the Al t...

Embodiment 3

[0040] The pressure grading ring body of the ultra-ultra-high voltage grading ring in Example 1 is made of semiconductor materials with the following components:

[0041] Ingredients: earthy graphite 16.75 kg, industrial multilayer graphene 0.25 kg, phenolic resin for friction material 50 kg, SiO treated with silane coupling agent 2 33 kg.

[0042] The specific production process is as follows: the above-mentioned ingredients are mixed and ground by ball milling, and then sieved by a 200-mesh sieve to take the sieved material, and put into a mold for producing pressure equalizing rings for hot pressing molding, molding pressure: 30 MPa, molding temperature: 230°C, The dwell time was 50 minutes at a temperature of 230°C.

[0043] The properties of the prepared equalizing ring are as follows: electrical conductivity: 1.08s / m; bending strength: 128.31MPa; tensile strength: 195MPa; linear expansion coefficient: 0.22×10 -4 / ℃; material shrinkage: 0.45%; material density: 1.84g / c...

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Abstract

The invention provides a super-high voltage grading ring and a production process thereof, aiming at the problems that the existing grading ring material is easy to cause potential difference and failure of the grading ring under the super-high voltage. The super-high voltage grading ring comprises an annular grading ring body which is made of semiconductor materials, the outer portion of the grading ring body is coaxially provided with an aluminum ring, a plurality of connection rods are uniformly distributed in an annular interval between the grading ring body and the aluminum ring, and theextension lines of the connection rods pass through the centers of circles of the grading ring body and the aluminum ring. By using the semiconductor material, the produced grading ring has an electric field under the super-high voltage to fundamentally avoid the potential difference problem, and the grading ring is not easy to cause breakdown of a device when the voltage generates voltage jump soas to obviously improve the whole reliability of the device.

Description

technical field [0001] The invention belongs to the technical field of pressure equalizing rings, and in particular relates to an ultra-ultrahigh pressure equalizing ring and a production process thereof. Background technique [0002] The equalizing ring is one of the important components on the high-voltage equipment. It is a ring-shaped part used to improve the voltage distribution on the insulator. There is no potential difference between the various parts of the ring, so as to achieve the effect of equalizing pressure. [0003] At present, the traditional materials of the grading ring are aluminum alloy and stainless steel. Under ultra-ultra-high voltage, since there is no electric field inside the metal material, there is a potential difference in the grading ring, which is easy to cause device failure when the voltage changes suddenly in the ultra-ultra-high voltage environment. Contents of the invention [0004] The present invention aims at the problem that the ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B17/42C08L61/06C08K9/06C08K3/36C08K3/04C08K7/00C23C14/18C23C14/35
CPCC08K3/04C08K3/042C08K3/36C08K7/00C08K9/06C23C14/185C23C14/352H01B17/42C08L61/06
Inventor 白慧琳高海涛郝逢媛冯焕丽马占山
Owner 平顶山正植科技有限公司
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