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Tritium-contaminated optical film non-destructive removal method based on inert ion beam etching

A technology of ion beam etching and optical film, applied in the direction of chemical instruments and methods, cleaning methods and utensils, etc., to achieve the effects of easy handling, easy curing and collection, and easy cleaning

Active Publication Date: 2019-07-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Description
  • Claims
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Problems solved by technology

[0008] Aiming at the disadvantages of using acid etching to remove tritium-contaminated optical films in the prior art, the present invention provides a non-destructive removal method for tritium-contaminated optical films based on inert ion beam etching. During the process of optical film, the surface quality, optical performance and laser damage resistance of the optical substrate will not be affected

Method used

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  • Tritium-contaminated optical film non-destructive removal method based on inert ion beam etching
  • Tritium-contaminated optical film non-destructive removal method based on inert ion beam etching
  • Tritium-contaminated optical film non-destructive removal method based on inert ion beam etching

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Embodiment 1

[0063] This embodiment is an optical element to be removed: the size of the fused silica substrate is 30mm×30mm×4mm, and the surface is coated with triple frequency sol-gel SiO 2 AR coating. The thickness of the optical film of the same process as the optical element to be removed was measured by ellipsometer to be 73nm; then an argon ion beam with an energy of 400eV, a beam current of 300mA, and an incident angle of 0° was used to sequentially etch the optical film on the surface of the element for 1 , 1.5, 2, 2.5, 3, 6min, use a UV-visible spectrophotometer to test the transmittance of the component at 355nm wavelength after each etching, and obtain the relationship between transmittance and time, as shown in Figure 4 As shown, the inflection point of the transmittance close to the optical substrate is the time just after the film is removed, which is 2 minutes, and the etching rate of the ion beam on the optical film is 36.5nm / min; the same ion beam parameters are used to ...

Embodiment 2

[0065] This embodiment is an optical element to be removed: the size of the fused silica substrate is 30mm×30mm×4mm, and the surface is coated with triple frequency sol-gel SiO 2 AR coating. The thickness of the optical film of the same process as the optical element to be removed was measured by ellipsometer to be 73nm; then the optical film on the surface of the element was sequentially etched by an argon ion beam with an energy of 1000eV, a beam current of 300mA, and an incident angle of 0° for 0.5 , 1, 1.5, 2, 4min, using a UV-visible spectrophotometer to test the transmittance of the element at a wavelength of 355nm after each etching, and obtain the relationship between the transmittance and time, as shown in Image 6 As shown, the inflection point of the transmittance approaching the optical substrate is the time just after the removal of the film layer, which is 1.3min, and the etching rate of the ion beam on the optical film is 56.15nm / min; The optical film on the su...

Embodiment 3

[0071] This example is an optical element to be removed: the K9 base size is φ50mm×5mm, and the surface is coated with sol-gel SiO 2 membrane. The thickness of the optical film of the same process as the optical element to be removed was measured by a step meter to be 277.6nm; then an argon ion beam with an energy of 400eV, a beam current of 300mA, and an incident angle of 30° was used to etch the optical film on the surface of the element for 4min , the etching depth measured by a step meter is 141.1nm, and the etching rate of the ion beam on the optical film is 35.27nm / min; using the same ion beam parameters to etch the optical film on the surface of the film-removing element for 8min, the measured SEM image of the surface of the etched component, such as Figure 10 As shown, the optical film was completely removed and no contamination was introduced. The measured surface roughness and laser damage threshold of the substrate after film removal are listed in Table 2. Compar...

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Abstract

The invention belongs to the technical field of optical element manufacturing, and particularly relates to a tritium-contaminated optical film non-destructive removal method based on inert ion beam etching. In order to overcome the shortcoming that acid etching is used in the prior art to remove tritium-contaminated optical films, the method in the technical scheme comprises the steps that the thickness of optical films made according to the technology the same as that of the optical elements to be subjected film removing is firstly measured; then the etching rate of ion beams on the optical films on the element surfaces is calibrated; and finally inert ion beams with the energy being 100 eV to 1500 eV, the beam current being 100 mA to 500 mA and the ion beam incident angle being -90 degrees to 90 degrees are adopted to accurately etch and remove the tritium-contaminated optical films on the element surfaces. By means of the method, the shortcoming existing in an existing acid etchingtechnology for removing the tritium-contaminated optical films can be effectively overcome, and meanwhile, it is ensured that the surface quality, the optical performance and the laser damage resistance of an optical substrate are not affected.

Description

technical field [0001] The invention belongs to the technical field of optical element manufacturing, and in particular relates to a method for nondestructively removing tritium-contaminated optical films based on inert ion beam etching. Background technique [0002] Energy plays a vital role in the development of economy and the progress of social civilization, and the development of economy and society largely depends on energy as an important foundation. Fusion energy is an environmentally friendly and renewable new energy. Laser-driven inertial confinement fusion (ICF) is one of the possible ways to realize fusion energy. It uses intense laser to heat nuclear fuel to generate high-temperature and high-pressure plasma to realize nuclear fusion reaction and release energy. As the driver of ICF, the high-power solid-state laser device contains a large number of optical components, such as gratings, windows, shields, lenses, amplifiers, polarizers, and frequency conversion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B7/00
CPCB08B7/0035
Inventor 祖小涛黎波向霞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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