The invention discloses a production method of a low-emissivity glass. The production method comprises the steps of A, sputtering a ceramic titanium target with alternating-current medium-frequency power supply, namely, forming a TiO2 dielectric layer on a glass substrate through magnetron sputtering; B, sputtering a chromium plane target with direct-current power supply, namely, forming a CrNx barrier layer on the TiO2 dielectric layer through magnetron sputtering; C, sputtering an aluminum-doped zinc oxide ceramic rotating target with alternating-current power supply, namely, forming an AZO flat layer on the TiO2 dielectric layer through magnetron sputtering; D, sputtering a silver plane target with direct-current power supply,namely, forming an Ag functional layer on the AZO flat layer through magnetron sputtering; E, sputtering with direct-current power supply, namely, forming a (NiCr)xOy layer on the Ag functional layer through magnetron sputtering; F, sputtering a tin target with alternating-current medium-frequency power supply, namely, forming a SnO2 protection layer on the (NiCr)xOy layer through magnetron sputtering; and G, sputtering a graphite target with direct-current power source, namely, forming a C layer on the SnO2 protection layer obtained in the step F through magnetron sputtering. The invention aims at providing the production method, which is simple in process, convenient to operate and relatively low in production cost, of the low-emissivity glass.