Macromolecular memristor with storage and calculation functions at same time, and preparation method and application thereof
A polymer and memristor technology, applied in the field of organic/polymer information storage devices, can solve the problems of low processing rate and reduce the processing efficiency of electronic equipment, achieve high yield, break through the bottleneck and performance of chip storage and processing stable effect
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Embodiment 1
[0056] Such as figure 1 ,Schematic diagram of the multi-state storage performance of the Pt / PFTPA-Fc / ITO structure device in the low conduction state. The method comprises the steps of:
[0057] The initial state of the device Pt / PFTPA-Fc / ITO is in a low conduction state, such as figure 1 As shown in a, when a voltage of 0V→-2V→0V is applied (1st cycle), the current of the device changes slowly. Then apply a voltage of 0V→2V→0V (the second circle), the current decreases with the application of the voltage, and the current at 2V is about 10 -7 A, apply the voltage of 0V→2V→0V again (the third circle), the current decreases with the application of the voltage, and the current at 2V decreases to about 10 -8 A, the 0V→2V→0V voltage scan of the 4th and 5th laps will also produce the same effect as the 2nd and 3rd lap scans, that is, 4 positive-phase 0V→2V→0V voltage scans can produce 4 different current states, and the current switching ratio between different current states is...
Embodiment 2
[0059] Such as figure 2 For Pt / PFTPA-Fc / ITO devices in the high current region (>10 -5 A, current-voltage curve of high conduction state). Such as figure 2 As shown in a, under continuous negative voltage (0V→-2V→0V) and positive voltage (0V→2V→0V) sweeps, the current of the device can be continuously regulated. During the negative scanning voltage process of 0V→-2V→0V, the absolute value of the current of the device will increase slowly with the increase of the number of scans, and the absolute value of the current at -2V increases from 165.1μA to 229.5μA; at 0V→2V →During the negative scanning voltage of 0V, the absolute value of the current of the device will slowly decrease with the increase of the number of scans, and the absolute value of the current at 2V decreases from 70.3 μA to 51.7 μA. Such as figure 2 b is the relationship between the absolute value of the current at the voltage of ±2V and the number of scans (the last 17 scans). It can be seen from the figu...
Embodiment 3
[0062] Such as Figure 4 , this example studies the logic processing of the device in the high conduction state and realizes the 'OR' (or) logic gate, that is, as long as one of the inputs is a logic "1", the output is a logic "1", only when all the inputs When all are logic "0", the output is logic "0". Such as Figure 4 As shown in a, set two conditions: (1) Positive pulse (amplitude of 2V, continuous time of 30ms) as input "0", negative pulse (amplitude of -2V, continuous time of 30ms) as input "1" "; (2) When the device is in the high conduction state, the initial current (with 0.2V as the read voltage) is 10.36μA. If the obtained current at 0.2V is greater than the initial current of 10.36μA, the result is 1, and if the obtained current at 0.2V is less than the initial current of 10.36μA, the result is 0. Figure 4 b shows the output experimental results obtained after different input conditions, from which it can be seen that as long as there is a logic "1" in the inp...
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