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Bi4Ti2.95Co0.05O12 multiferroic film capable of realizing c-axis oriented growth on Si as substrate and preparation method of Bi4Ti2.95Co0.05O12 multiferroic film

A bi4ti2.95co0.05o12, oriented growth technology, applied in chemical instruments and methods, inorganic chemistry, cobalt compounds, etc., can solve the problems of unsatisfactory film properties, large differences in lattice matching and thermal expansion coefficients, etc. Low cost of raw materials, high remanent polarization, and stable sol properties

Active Publication Date: 2019-08-02
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Si substrate and Bi 4 Ti 3 o 12 The lattice matching degree and the thermal expansion coefficient of the similar materials are quite different, resulting in Bi 4 Ti 3 o 12 The growth of thin-film-like materials on Si substrates is non-oriented, so that the performance of the thin-film is not very ideal

Method used

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  • Bi4Ti2.95Co0.05O12 multiferroic film capable of realizing c-axis oriented growth on Si as substrate and preparation method of Bi4Ti2.95Co0.05O12 multiferroic film
  • Bi4Ti2.95Co0.05O12 multiferroic film capable of realizing c-axis oriented growth on Si as substrate and preparation method of Bi4Ti2.95Co0.05O12 multiferroic film
  • Bi4Ti2.95Co0.05O12 multiferroic film capable of realizing c-axis oriented growth on Si as substrate and preparation method of Bi4Ti2.95Co0.05O12 multiferroic film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Growth of Bi in c-axis orientation on Si substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic film, by weight percentage, includes the following components: Bi(NO 3 ) 2 ·5H 2 O7.63%, Co(NO 3 ) 2 ·6H 2 O0.1%, butyl titanate 3.5%, ethylene glycol methyl ether 80.4%, acetylacetone 8.37%.

Embodiment 2

[0046] Growth of Bi in c-axis orientation on Si substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic film, by weight percentage, includes the following components: Bi(NO 3 ) 2 ·5H 2 O19.22%, Co(NO 3 ) 2 ·6H 2 O0.26%, butyl titanate 8.88%, ethylene glycol methyl ether 50.64%, acetylacetone 21%.

Embodiment 3

[0048] Growth of Bi in c-axis orientation on Si substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic film, by weight percentage, includes the following components: Bi(NO 3 ) 2 ·5H 2 O12.93%, Co(NO 3 ) 2 ·6H 2 O0.18%, butyl titanate 5.69%, ethylene glycol methyl ether 66.55%, acetylacetone 14.65%.

[0049] The present invention prepares Bi 4 Ti 2.95 co 0.05 o 12 The multiferroic thin film specifically comprises the following steps:

[0050] Step 1: According to Bi(NO 3 ) 2 ·5H 2 O: ethylene glycol methyl ether = (0.75 ~ 3): molar ratio of 10, weigh a certain amount of Bi (NO 3 ) 2 ·5H 2 Add O and ethylene glycol methyl ether into the beaker, stir at room temperature for 10-30 minutes until completely dissolved, and form solution A;

[0051] According to Co(NO 3 ) 2 ·6H 2 O: ethylene glycol methyl ether = (9.125 × 10 -3 ~0.0365):10 molar ratio, weigh a certain amount of Co(NO 3 ) 2 ·6H 2 Add O and ethylene glycol methyl ether into the beaker, stir at room temp...

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Abstract

A Bi4Ti2.95Co0.05O12 multiferroic film capable of realizing c-axis oriented growth on Si as a substrate is prepared from components as follows: Bi(NO3)2.5H2O, Co(NO3)2.6H2O, butyl titanate, ethylene glycol monomethyl ether and acetylacetone. The preparation method comprises the steps as follows: Bi4Ti2.95Co0.05O12 sol is used as a precursor, a Bi4Ti2.95Co0.05O12 gel film is prepared on the Si substrate taking c-axis oriented LaNiO3 as a buffer layer, then, drying and heat tretament are performed, and the Bi4Ti2.95Co0.05O12 multiferroic film with c-axis orientation is prepared. The Bi4Ti2.95Co0.05O12 multiferroic film has the characteristics that the film has excellent conductivity and can replace noble metals such as platinum and gold to be used as a bottom electrode for electric performance test of the Bi4Ti2.95Co0.05O12 film.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation and multiferroic materials, in particular to the c-axis orientation growth of Bi with Si as the substrate 4 Ti 2.95 co 0.05 o 12 Multiferroic thin films grown c-axis oriented Bi on Si substrates 4 Ti 0.95 co 0.05 o 12 Multiferroic films. Background technique [0002] Bismuth titanate (Bi 4 Ti 3 o 12 ) is a lead-free ferroelectric material with bismuth layered perovskite structure, which has a high Curie temperature, low dielectric constant, high stability, high magnetocrystalline anisotropy and excellent fatigue resistance, It is widely used in high temperature and high frequency electronic components, ferroelectric memory materials and other fields. With the gradual miniaturization and multi-functional development of the microelectronics field, the ferroelectric thin film used in memory requires high remnant polarization, small coercive field and low leakage current densi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G51/00C04B41/89
CPCC01G51/40C04B41/52C04B41/89C04B41/009C01P2004/20C04B32/00C04B41/5025C04B41/4554
Inventor 段宗范梅云赵园欣赵高扬
Owner XIAN UNIV OF TECH
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