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Method for preparing thin films in different components and doping ratios through multi-target co-sputtering

A co-sputtering and thin-film technology, which is applied in the field of thin-film preparation that can flexibly adjust the composition and doping ratio, can solve the problems of not being prepared, not being able to obtain a thin film, and being unable to flexibly adjust the VO phase transition temperature, etc., to achieve repeatability Strong, low production cost, good process stability

Inactive Publication Date: 2019-08-23
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these preparation processes still face two problems: first, they cannot flexibly adjust VO 2 phase transition temperature
This preparation process solves the VO 2 The large-area preparation of thin films is a problem, but it is still impossible to obtain VO with a phase transition near room temperature 2 film
In 2016, C.O.F.Ba ​​et al prepared VO by rapid oxidation annealing 2 films, but they did not produce doped VO 2 film

Method used

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  • Method for preparing thin films in different components and doping ratios through multi-target co-sputtering
  • Method for preparing thin films in different components and doping ratios through multi-target co-sputtering
  • Method for preparing thin films in different components and doping ratios through multi-target co-sputtering

Examples

Experimental program
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Effect test

Embodiment 1

[0031] In this example, a VW film with a specific W doping ratio is deposited on an amorphous K9 glass substrate by double-target co-sputtering with a fixed power ratio of 500W:0W. The VW atomic ratio in the vanadium-tungsten target is 98:2. Then, VO with specific W doping ratio was prepared by vacuum pre-annealing and oxidation annealing process. 2 thin films, and finally tested the prepared doped VO 2 Film transmission properties. The specific implementation steps are as follows:

[0032] 1. Substrate cleaning. Put the amorphous K9 glass substrate into an acetone solution (MOS grade, purity greater than 99.8%) for 5 minutes, and then put it into an anhydrous ethanol solution (MOS grade, purity greater than 99.7%) for 5 minutes to remove oil on the surface of the substrate , after ultrasonic cleaning, take it out vertically and dry it with nitrogen.

[0033] 2. Place the cleaned substrate in the input cavity of the magnetron sputtering coating line, and evacuate to 9.9×10...

Embodiment 2

[0039] In this example, a VW thin film with a specific W doping ratio is deposited on an amorphous K9 glass substrate by double-target co-sputtering with a fixed power ratio of 500W:250W. The VW atomic ratio in the vanadium-tungsten target is 98:2. Then prepare VO with a certain W doping ratio by vacuum pre-annealing and oxidation annealing process 2 thin films, and finally tested the prepared doped VO 2 Film transmission properties. The specific implementation steps are as follows:

[0040] 1. Substrate cleaning. Put the amorphous K9 glass substrate into an acetone solution (MOS grade, purity greater than 99.8%) for 5 minutes, and then put it into an anhydrous ethanol solution (MOS grade, purity greater than 99.7%) for 5 minutes to remove oil on the surface of the substrate , after ultrasonic cleaning, take it out vertically and dry it with nitrogen.

[0041] 2. Place the cleaned substrate in the input cavity of the magnetron sputtering coating line, and evacuate to 9.9×1...

Embodiment 3

[0047] In this example, a VW thin film with a specific W doping ratio is plated on an amorphous K9 glass substrate by double-target co-sputtering with a fixed power ratio of 500W:500W. The VW atomic ratio in the vanadium-tungsten target is 98:2. Then prepare VO with a certain W doping ratio by vacuum pre-annealing and oxidation annealing process 2 thin films, and finally tested the prepared doped VO 2 Film transmission properties. The specific implementation steps are as follows:

[0048] 1. Substrate cleaning. Put the amorphous K9 glass substrate into an acetone solution (MOS grade, purity greater than 99.8%) for 5 minutes, and then put it into an anhydrous ethanol solution (MOS grade, purity greater than 99.7%) for 5 minutes to remove oil on the surface of the substrate , after ultrasonic cleaning, take it out vertically and dry it with nitrogen.

[0049] 2. Place the cleaned substrate in the input cavity of the magnetron sputtering coating line, and evacuate to 9.9×10 ...

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Abstract

The invention discloses a method for preparing thin films in different components and doping ratios through multi-target co-sputtering. Due to a traditional film coating means of a normal temperaturemagnetron sputtering film coating system, with V being a proportion, the manner of multi-target co-sputtering is introduced to prepare V thin films in different doping components and doping ratios; then an oxidizing annealing process is used for achieving preparation of VO2 thin films in different doping components and doping ratios, so that the phase transformation temperature of the VO2 thin films is adjusted, and wide application in the fields of uncooled infrared focal planes, optical switches, intelligent energy-saving glass and the like can be achieved. Doped atoms can be one or a combination of tungsten, molybdenum, titanium, tantalum, fluorine and niobium, and two or more can be selected for the number of target materials for use according to the specific condition. The method forpreparing the doped thin films through multi-target co-sputtering effectively avoids the problem that different doping components and doping ratios of a traditional sputtering method need a pluralityof different target materials, the preparation cost is greatly lowered, meanwhile, the flexibility and diversity of doping are improved, and the characteristic of being matched with a large-scale filmcoating production line is achieved.

Description

technical field [0001] The invention relates to the field of functional materials, in particular to a film preparation method that can flexibly adjust components and doping ratios. [0002] technical background [0003] The infrared transmission control structure refers to the artificial structure that can adjust its infrared transmission ability by changing some parameters of the material, and has broad application prospects in the field of energy-saving glass. Such as thermochromic glass, electrochromic glass and gas-chromic glass. Among them, electrochromic glass and aerochromic glass require complex multilayer structures to ensure their functional integrity, and have low visible light transmittance to effectively utilize sunlight. Thermochromic glass only needs a simple single-layer glass structure to achieve infrared transmission control, and its visible light transmittance is relatively high, which is the most promising energy-saving glass. The most representative str...

Claims

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Application Information

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IPC IPC(8): C23C14/16C23C14/18C23C14/34C23C14/35C23C14/58
CPCC23C14/165C23C14/185C23C14/3464C23C14/352C23C14/5853
Inventor 王少伟陈旭吴明飞刘星星陆卫陈效双
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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