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Methods and apparatus for low temperature silicon nitride films

A technology of silicon nitride film and silicon-containing film, which is applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of device performance degradation, complicated and expensive use of multiple patterning technology, etc.

Active Publication Date: 2019-08-27
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some of these challenges lead to imprecise patterning and degraded device performance
In addition, multiple patterning techniques use complex and expensive manufacturing processing equipment

Method used

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  • Methods and apparatus for low temperature silicon nitride films
  • Methods and apparatus for low temperature silicon nitride films
  • Methods and apparatus for low temperature silicon nitride films

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Embodiment Construction

[0026] Before describing several exemplary embodiments of the disclosure, it is to be understood that the disclosure is not limited to the details of construction or process steps set forth in the following description. The disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0027] As used herein, "substrate" refers to any substrate or surface of material formed on a substrate on which a film treatment is performed during a manufacturing process. Examples of substrate surfaces on which processing can be performed include silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, depending on the application, for example. Materials of gallium arsenide, glass, sapphire and any other material such as metals, metal nitrides, metal alloys and other conductive materials. Without limitation, a substrate includes a semiconductor wafer. The substrate can...

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Abstract

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature lessthan or equal to about 250 DEG C to form a silicon nitride film with a low etch rate without damaging the metal surface.

Description

technical field [0001] Embodiments of the present disclosure relate to methods and apparatus for depositing silicon nitride films. In particular, embodiments of the present disclosure relate to methods and apparatus for low temperature deposition of silicon nitride films as cobalt liners. Background technique [0002] As semiconductor device dimensions continue to shrink below the 10nm regime, traditional patterning processes using photolithography become more challenging. Some of these challenges result in imprecise patterning and degraded device performance. Furthermore, multiple patterning techniques use complex and expensive manufacturing processing equipment. [0003] Historically, silicon-based low-k films have been deposited by ALD in a furnace. To achieve selected film properties, films are typically deposited in a furnace at temperatures above 500°C. As the thermal budget for each wafer node continues to decrease, there is a need for methods of depositing low-k ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/324H01L21/3065
CPCC23C16/345C23C16/45527C23C16/45542H01L21/0217H01L21/02211H01L21/02274H01L21/0228H01L21/0254H01L21/3065H01L21/324H01L21/68771
Inventor 闫文波聪·郑李宁米哈拉·鲍尔西努夏立群玛丽贝尔·马尔多纳多·加西亚
Owner APPLIED MATERIALS INC