Silicon-based lithium niobate thin film electro-optic modulator array

Abstract

The invention relates to a large-scale silicon-based lithium niobate thin film electro-optic modulator array. The invention has the advantages that the difficulty of preparation process of a lithium niobate crystal layer is reduced through a structural design, the precision requirement of bonding of lithium niobate and silicon is reduced, the preparation and the bonding of a large-scale array typelithium niobate crystal layer can be simultaneously completed at one time, and the production efficiency of the silicon-based lithium niobate thin film electro-optic modulator array is greatly improved; and through the structural design and optimization of the silicon crystal layer, light can be naturally alternated and transmitted mutually in silicon waveguide and lithium niobate waveguide, anda high-performance lithium niobate thin film electro-optic modulation effect is realized. In addition, the method utilizes the maturity advantage of a standardized silicon-based integration technologyand concentrates a complex chip preparation process on the silicon crystal layer, thereby reducing the process error in the chip manufacturing process and ensuring the performance stability of the whole silicon-based lithium niobate thin film electro-optic modulator array.

Description

technical field [0001] The invention relates to the technical field of optoelectronic integrated devices, in particular to a large-scale silicon-based lithium niobate thin-film electro-optical modulator array. [0002] technical background [0003] The electro-optic modulator loads the electrical signal onto the optical signal, and is the signal input interface of optical signal processing systems such as optical communication and microwave photonic radar. Its performance directly determines the performance of the optical signal processing system, so it has become a very important photonic device. In order to realize an integrated electro-optic modulator on a chip, an electro-optic modulator using a standardized silicon-based integration process has appeared (Ding Jianfeng, Zhang Lei, Yang Lin, "Silicon-based integrated differential electro-optic modulator and its preparation method", national invention patent CN105044931B , 2015). Using doped silicon as the light-guiding m...

AI Technical Summary

Problems solved by technology

However, the use of doped silicon as a light-guiding medium has the following problems: doped silicon has an absorption effect on light, which will significantly increase the insertion loss of the electro-optic modulator; the modulation efficiency of doped silicon is low, so the designed half-wave voltage Usually higher, reducing the conversion rate of electro-optic modulation

However, the bonding method has the notable feature of low production efficiency, which cannot be applied to the preparation of large-scale silicon-based lithium niobate thin film electro-optic modulator arrays.

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