Gallium nitride crystal growth apparatus and gallium nitride crystal growth method

A crystal growth and gallium nitride technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as uneven crystal thickness, raw material loss, and low crystal quality, so as to reduce raw material loss and improve growth Effects of speed and crystallization quality

Inactive Publication Date: 2019-09-03
SHANGHAI XITANG SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] for figure 1 In the gallium nitride crystal growth device shown in , when the gallium nitride crystal grows, it takes a long time for the raw material in the reaction vessel 100 to diffuse and convect from the raw material area 200 to the crystallization area 300, which makes the growt

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  • Gallium nitride crystal growth apparatus and gallium nitride crystal growth method
  • Gallium nitride crystal growth apparatus and gallium nitride crystal growth method
  • Gallium nitride crystal growth apparatus and gallium nitride crystal growth method

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[0040] (First embodiment)

[0041] According to Figure 2 to Figure 3 The first embodiment of the gallium nitride crystal growth apparatus according to the present invention will be described in detail.

[0042] In this embodiment, as figure 2 As shown, the gallium nitride crystal growth device according to the present invention includes a reaction vessel 1, a raw material region 2, a crystallization region 3, a partition plate 4, and a heating device assembly 5.

[0043] In this embodiment, the entire reaction vessel 1 has a substantially cylindrical shape, and the reaction vessel 1 is filled with liquid ammonia.

[0044] The raw material area 2 includes a first raw material area 21 and a second raw material area 22, and each raw material area 2 is provided with a raw material basket 23 for installing polycrystalline culture materials.

[0045] The crystallization region 3 includes a first crystallization region 31, a second crystallization region 32 and a third crystallization regio...

Example

[0061] (Second embodiment)

[0062] According to Figure 4 The second embodiment of the gallium nitride crystal growth apparatus according to the present invention will be described in detail.

[0063] In this embodiment, as Figure 4 As shown, the gallium nitride crystal growth device according to the present invention includes a reaction vessel 10, a raw material region 20, a crystallization region 30, a partition plate 40, and a heating device assembly 50.

[0064] The structures of the reaction container 10, the partition 40, and the heating device assembly 50 in this embodiment are substantially the same as the structures of the reaction container 1, the partition 4, and the heating device assembly 5 in the first embodiment, respectively.

[0065] In this embodiment, as Figure 4 As shown, the raw material area 20 includes a third raw material area 201, a fourth raw material area 202, and a fifth raw material area 203. Each raw material zone 20 is provided with a raw material bas...

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Abstract

The invention relates to a gallium nitride crystal growth apparatus and a gallium nitride crystal growth method. The gallium nitride crystal growth apparatus comprises a reaction container, wherein araw material zone and a crystallization zone are arranged inside the reaction container, the number of at least one of the raw material zone and the crystallization zone is at least two, and the raw material zone and the crystallization zone are alternately distributed in the axial direction of the reaction container. According to the present invention, with the gallium nitride crystal growth apparatus, the gallium nitride crystal growth rate and the gallium nitride crystal quality can be improved while the loss of the raw material can be reduced.

Description

technical field [0001] The invention relates to the technical field of gallium nitride crystal production, in particular to a gallium nitride crystal growth device and a growth method thereof. Background technique [0002] As a representative of the third-generation semiconductor materials, gallium nitride has unique properties such as large band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift velocity and small dielectric constant, which makes it widely used in optoelectronic devices, Power electronics, radio frequency microwave devices, lasers and detectors have broad market prospects. [0003] The growth methods of gallium nitride single crystal include hydride vapor phase epitaxy, high-pressure nitrogen melting method, ammonothermal method, Na flux method, etc., among which the ammonothermal method is widely used. When growing a gallium nitride single crystal by the ammonothermal method, ammonia is filled into the reaction v...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B7/10
CPCC30B7/10C30B29/406
Inventor 乔焜高明哲林岳明
Owner SHANGHAI XITANG SEMICON TECH CO LTD
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