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Quantum dot light emitting diode and preparation method thereof and display device

A quantum dot light-emitting and diode technology, applied in the direction of electric solid-state devices, semiconductor devices, organic semiconductor devices, etc., can solve the problems of exciton quenching, lower device performance, high device voltage, etc., achieve enhanced injection, improved performance, and reduced drive The effect of voltage

Inactive Publication Date: 2019-09-06
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using this method will result in a higher voltage of the device. In addition, electrons will gather at the interface between the hole transport layer and the QD light-emitting layer, and the excess electrons will easily lead to the quenching of excitons and reduce the performance of the device.

Method used

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  • Quantum dot light emitting diode and preparation method thereof and display device
  • Quantum dot light emitting diode and preparation method thereof and display device
  • Quantum dot light emitting diode and preparation method thereof and display device

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preparation example Construction

[0068] The embodiment of the present invention discloses a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0069] forming a first electron transport layer on the hole transport layer of the quantum dot light emitting diode;

[0070] forming a quantum dot light-emitting layer on the first electron transport layer; and / or

[0071] A quantum dot light emitting layer is formed on the hole transport layer of the quantum dot light emitting diode, and the quantum dot light emitting layer includes quantum dots and doped electron transport materials.

[0072] When the quantum dot light-emitting diode includes an anode, a hole injection layer, the hole transport layer, the first electron transport layer, the quantum dot light-emitting layer, a second electron transport layer and a cathode stacked in layers, the The preparation method of the quantum dot light-emitting diode specifically includes:

[0073] depositing an anode on the substrate; ...

Embodiment 1

[0094] A substrate is provided, and an ITO anode is prepared on the substrate; the ITO anode is sequentially cleaned with acetone, isopropanol, detergent, deionized water, isopropanol, dried and then O 2 Plasma treatment or UV ozone cleaning treatment;

[0095] On the ITO anode, prepare the hole injection layer of PEDOT:PSS material with solution or evaporation method;

[0096] Forming the first sub-hole transport layer of poly-TPD and the second sub-hole transport layer made of PVK by solution or evaporation method;

[0097] The first electron transport layer of B3PYMPM is formed by solution or evaporation method; the thickness of the first electron transport layer is less than 3nm;

[0098] Preparation of quantum dot luminescent layer by solution method;

[0099] Forming the second electron transport layer of ZnO by solution or evaporation method;

[0100] Al electrodes are formed by vapor deposition to obtain quantum dot light-emitting diodes.

[0101] Figure 5 Schema...

Embodiment 2

[0107] A substrate is provided, and an ITO anode is prepared on the substrate; the ITO anode is sequentially cleaned with acetone, isopropanol, detergent, deionized water, isopropanol, dried and then O 2 Plasma treatment or UV ozone cleaning treatment;

[0108] On the ITO anode, prepare the hole injection layer of PEDOT:PSS material with solution or evaporation method;

[0109] Forming the first sub-hole transport layer of poly-TPD and the second sub-hole transport layer made of PVK by solution or evaporation method;

[0110] Dissolving B3PYMPM and quantum dots in the same or different organic solvents and then mixing them to prepare the quantum dot light-emitting layer by solution method;

[0111] Forming the second electron transport layer of ZnO by solution or evaporation method;

[0112] Al electrodes are formed by vapor deposition to obtain quantum dot light-emitting diodes.

[0113] Figure 6 The energy level schematic diagram of the quantum dot light-emitting diode ...

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Abstract

The invention relates to the field of display, and particularly relates to a quantum dot light emitting diode and a preparation method thereof and a display device. One side, which is close to a holetransmission layer, of the quantum dot light emitting layer of the quantum dot light emitting diode is provided with a first electron transmission layer formed by an electron transmission material; and / or the quantum dot light emitting layer of the quantum dot light emitting diode is doped with the electron transmission material. The electron transmission material is added to one side of the holetransmission layer, the holes do not need to be injected into the quantum dot light emitting layer and the holes are injected between the electron transmission layer and the hole transmission layer orbetween the hole transmission layer and the quantum dot light emitting layer to be recombined with the electrons to form excimer complexes which conduct energy to the quantum dot light emitting layer, thereby avoiding the injection barrier from the hole transmission layer to the quantum dot light emitting layer and enhancing hole injection; meanwhile, the potential barrier of electron injection is increased and the number of electron injection is reduced and thus the carrier injection is more balanced.

Description

technical field [0001] The invention relates to the display field, in particular to a quantum dot light emitting diode, a preparation method thereof and a display device. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have become a popular research direction for next-generation display technology due to their high color purity, high quantum efficiency, and adjustable luminous color. [0003] The structure of a QLED generally includes a cathode, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer and an anode. The device structure of QLED is relatively special, because the energy level structure of quantum dot (QD) material does not match traditional organic electroluminescent (OLED) material and ITO electrode, and the ionization potential of QD is usually large, generally exceeding 6.0eV. The ionization potential of the blue and green QD materials even exceeds 6.5eV, while the work function of the ITO ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/155H10K50/11H10K2101/10H10K71/00H10K85/1135H10K85/146H10K50/16H10K2102/00H10K2102/103H10K2101/30H10K50/15H10K50/166H10K85/111H10K85/654H10K2101/40H10K2102/351
Inventor 尤娟娟
Owner BOE TECH GRP CO LTD
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