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Method for synthesizing CdS-WO3 composite material with homogeneous phase at one step

A composite material and a composite technology, which is applied in the field of homogeneous one-step synthesis of CdS-WO3 composite materials, can solve the problems of narrow light absorption range, high electron-hole recombination rate, cumbersome step-by-step synthesis, etc., and achieve the effect of simple operation.

Active Publication Date: 2019-09-10
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention is aimed at WO 3 Due to the narrow light absorption range and the high electron-hole recombination rate of a single semiconductor, it is proposed to improve the light absorption performance of the material by combining with CdS, improve the efficiency of electron-hole separation, and form a Z-type photocatalytic system, thereby improving Photocatalytic performance
At the same time, in view of the fact that the step-by-step synthesis is cumbersome and may affect the previous semiconductor, a homogeneous one-step method is proposed to synthesize two kinds of semiconductors at the same time during the reaction process, and the composite material can be obtained in one step.
This homogeneous one-step solvothermal reaction prepared CdS-WO 3 Composite methods have not been reported yet

Method used

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  • Method for synthesizing CdS-WO3 composite material with homogeneous phase at one step
  • Method for synthesizing CdS-WO3 composite material with homogeneous phase at one step
  • Method for synthesizing CdS-WO3 composite material with homogeneous phase at one step

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) 0.99gCd(NO 3 ) 2 4H 2 O powder and 0.489g of thiourea were added to 40ml of ethylene glycol and stirred for 1 hour to obtain the CdS precursor.

[0022] (2) Add 0.794gWCl to the CdS precursor prepared in (1) 6 The powder was stirred at room temperature for 40 minutes to dissolve to obtain the precursor solution of the complex.

[0023] (3) Put the compound precursor solution obtained in (2) into a hydrothermal reaction kettle, react at 180°C for 24 hours, and cool to room temperature naturally, then use ethanol and distilled water to wash centrifugally for several times, in a vacuum environment CdS-WO was obtained after drying 3 composite material. Samples were noted as 50% DW.

[0024] For comparison with the complex, pure WO was prepared by the same method 3 and pure CdS. Pure WO 3 preparation without adding Cd(NO 3 ) 2 4H 2 O and thiourea; preparation of pure CdS without adding WCl to the precursor solution 6 , and the other preparation conditions we...

Embodiment 2

[0027] With embodiment 1 step (1) in Cd (NO 3 ) 2 4H 2 The amount of O and thiourea is changed into 1.21g and 0.597g respectively, all the other are the same as embodiment 1, the CdS-WO that makes 3 Composite material, the sample is recorded as 55% DW.

[0028] The XRD spectrum of the sample 55% DW obtained in Example 2 also showed hexagonal WO 3 and the diffraction peaks of hexagonal CdS (see attached figure 1 ), similar to the XRD pattern of 50%DW in Example 1. at 100mW / cm 2 Under light intensity, when the voltage is 0.5V, the response current density of 55% DW is 22.97μA / cm 2 , higher than 50% DW response current value under the same conditions, see attached image 3 . Under visible light irradiation (λ≥420nm), 55% DW showed photocatalysis. After 150min of light, the degradation rate of methylene blue reached 96.5%, and its catalytic activity was stronger than 50% DW, see attached Figure 4 .

Embodiment 3

[0030] With embodiment 1 step (1) in Cd (NO3 ) 2 4H 2 The amount of O and thiourea is changed into 1.485g and 0.733g respectively, all the other are the same as embodiment 1, the CdS-WO that makes 3 Composite materials, denoted as 60% DW.

[0031] The XRD spectrum of the sample 60% DW obtained in Example 3 also showed hexagonal WO 3 and the diffraction peaks of hexagonal CdS (see attached figure 1 ), similar to the XRD pattern of 50%DW in Example 1. at 100mW / cm 2 Under light intensity, when the voltage is 0.5V, the response current of 60% DW is 29.55μA / cm 2 , higher than 55% DW response current value under the same conditions, see attached image 3 . Under visible light irradiation (λ≥420nm), 60% DW showed photocatalysis. After 150min of light, the degradation rate of methylene blue reached 97.2%, and its catalytic activity was stronger than that of 55% DW, see attached Figure 4 .

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Abstract

The invention discloses a method for synthesizing a CdS-WO3 composite material with a homogeneous phase at one step. The method comprises the following steps: simultaneously dissolving a sulfur sourceand a cadmium source for preparing CdS, and a tungsten source for preparing WO3, into a same solvent so as to obtain a homogeneous phase mixed solution, and carrying out a reaction under a solvothermal doncition, so as to simultaneously generate CdS and WO3, and obtain the CdS-WO3 composite material. Compared with a synthesis method of different steps, the method disclosed by the invention is simple, and in addition, the problem of semiconductor property change which can be caused in synthesis of different steps can be solved. Relative contents of CdS and WO3 in a compound can be controlled by changing relative concentrations of the cadmium source, the sulfur source and the tungsten source, so that the photoelectricity and the photocatalytic performance of the CdS-WO3 composite material can be adjusted, and the prepared CdS-WO3 composite material can be applied to fields of photoelectricity and photocatalysis.

Description

technical field [0001] The invention belongs to the field of photocatalytic semiconductor technology, in particular to a homogeneous one-step synthesis of CdS-WO 3 Composite approach. Background technique [0002] Photocatalytic semiconductor materials can use solar energy to degrade toxic pollutants in the environment and have the potential to decompose water to produce hydrogen, and are considered to be one of the most promising clean energy materials. For semiconductor materials used in the field of photocatalysis, in addition to having a suitable band gap and high absorption and utilization of light, the low recombination probability of photogenerated electrons and holes is also an important condition to ensure its photocatalytic performance. A single photocatalytic semiconductor material has a limited range of light absorption and a high recombination probability of photogenerated electrons and holes, so its performance is often unsatisfactory. Combining semiconductor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/047C02F1/30C02F101/38C02F101/36
CPCB01J27/047C02F1/30C02F2305/10C02F2101/38C02F2101/36C02F2101/40B01J35/33B01J35/39
Inventor 利明王献栋张清彦刘雅婷
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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