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Semiconductor structures and methods of forming them

A semiconductor and gas technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as semiconductor structure performance needs to be improved

Active Publication Date: 2021-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of semiconductor structures in the prior art still needs to be improved

Method used

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  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] It can be seen from the background art that the performance of existing semiconductor structures still needs to be improved.

[0037] An analysis is now made in conjunction with a method for forming a semiconductor structure. The process steps of forming a semiconductor structure mainly include: providing a substrate, the substrate has a dielectric layer, and the dielectric layer has an opening penetrating through the thickness of the dielectric layer. The opening There are source and drain doped regions in the substrate on both sides; an oxide layer is formed at the bottom of the opening by a chemical oxidation method; a high-k gate dielectric layer is formed on the surface of the oxide layer; after the high-k gate dielectric layer is formed, A metal gate is formed filling the opening.

[0038] The performance of the semiconductor structure formed by the above method is poor, and the reason for the analysis is that the thickness of the inversion layer of the semiconduc...

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Abstract

A semiconductor structure and its forming method, the semiconductor structure forming method comprising: providing a substrate, the substrate has a dielectric layer, and the dielectric layer has an opening through the thickness of the dielectric layer; forming a second substrate at the bottom of the opening An oxide layer; a sacrificial layer is formed on the first oxide layer, and during the process of forming the sacrificial layer, an oxidation treatment is performed on a part of the thickness of the substrate located at the bottom of the first oxide layer, so that the first oxide layer Transforming into a second oxide layer, the material of the second oxide layer is the same as that of the first oxide layer, and the thickness of the second oxide layer is greater than the thickness of the first oxide layer; removing the sacrificial layer. The invention can effectively reduce the leakage current and improve the performance of the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In semiconductor manufacturing, as the feature size of integrated circuits continues to decrease, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, resulting in poor control ability of the gate to the channel, and short-channel effects (SCE: short-channel effects) more likely to happen. [0003] The Fin Field Effect Transistor (FinFET) has outstanding performance in suppressing the short channel effect. The gate of the FinFET can control the fin at least from both sides. Therefore, compared with the planar MOSFET, the gate of the FinFET has an The control ability is stronger, and the short channel effect can be well suppr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L27/092
CPCH01L21/823821H01L21/823857H01L27/0924
Inventor 何有丰
Owner SEMICON MFG INT (SHANGHAI) CORP
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