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Mono-crystal strontium titanate substrate with atomic-scale step structure and preparation method of substrate

An atomic-level step and substrate substrate technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of unfavorable high-quality functional thin film growth, unexplored chemical reaction time, obvious defects and holes, etc. problem, to achieve the effect of low surface root mean square roughness, suitable annealing time and good surface quality

Inactive Publication Date: 2019-09-20
BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Ammonium fluoride buffer chemical method is widely used, but the acid value and ion species configuration of the buffer in this method are rarely involved, so the optimal buffer corrosion solution conditions and chemical reaction time have not been explored, so that the preparation The strontium titanate substrate surface often has a coral-like step surface, and the defects and holes are obvious. High-quality functional films will have grain boundaries or non-ideal polycrystalline states at the defects, and the holes are easy to appear. The island-like growth mode of the film, not the layered growth mode, there will be screw dislocations in the island-like growth mode, which are all high-quality functional films to avoid
[0005] Another treatment method is the physical method of high-temperature annealing. This method is difficult to reconstruct the surface by simply relying on temperature control of the surface atoms of the substrate to overcome its own kinetic barrier. Steps, and white needle-like unknown objects are often precipitated on the surface, which is not conducive to the growth of high-quality functional films

Method used

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  • Mono-crystal strontium titanate substrate with atomic-scale step structure and preparation method of substrate
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  • Mono-crystal strontium titanate substrate with atomic-scale step structure and preparation method of substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Embodiment 1: Preparation method of single crystal strontium titanate substrate with atomic-level step structure

[0050] Steps include:

[0051] (1) Ultrasonic cleaning is carried out for the first time on the untreated strontium titanate substrate substrate; the first ultrasonic cleaning includes three steps, and the cleaning steps are as follows: first, the untreated strontium titanate substrate substrate is The chip was ultrasonically cleaned in acetone solution, and the ultrasonic cleaning time of the acetone solution was 10 minutes; then, the strontium titanate substrate substrate cleaned by the acetone solution was ultrasonically cleaned in the ethanol solution, and the ultrasonic cleaning time of the ethanol solution was 10 minutes; finally, The strontium titanate substrate substrate cleaned by the ethanol solution is ultrasonically cleaned in deionized water, and the ultrasonic cleaning time of deionized water is 10 minutes;

[0052] (2) corrode the first clea...

Embodiment 2

[0057] Embodiment 2: Preparation method of single crystal strontium titanate substrate substrate with atomic-level step structure

[0058] Steps include:

[0059] (1) The strontium titanate substrate substrate after the first ultrasonic cleaning in Example 1 is corroded with the ammonium fluoride-hydrofluoric acid buffer solution with a pH value of 4.5 after the first cleaning of the strontium titanate substrate Substrate, etch time is 45s;

[0060] (2) Perform annealing treatment on the obtained strontium titanate substrate substrate under a high-temperature flowing oxygen atmosphere. The conditions for annealing treatment are: place the strontium titanate substrate substrate in a vacuum environment, feed flowing oxygen gas, and control the temperature 950℃, the annealing time is 1h;

[0061] (3) ultrasonically cleaning the strontium titanate substrate substrate after the annealing treatment for the second time, the cleaning method and steps are the same as in Example 1; an...

Embodiment 3

[0063] Embodiment 3: Preparation method of single crystal strontium titanate substrate with atomic-level step structure

[0064] Steps include:

[0065] (1) The strontium titanate substrate substrate after the first ultrasonic cleaning in Example 1 is corroded with the ammonium fluoride-hydrofluoric acid buffer solution with a pH value of 5.5 after the first cleaning of the strontium titanate substrate For the substrate, the etching time is 35s; then, the strontium titanate substrate substrate etched by the buffer solution is ultrasonically cleaned with deionized water for 10 minutes;

[0066] (2) Perform annealing treatment on the obtained strontium titanate substrate substrate under a high-temperature flowing oxygen atmosphere. The conditions for annealing treatment are: place the strontium titanate substrate substrate in a vacuum environment, feed flowing oxygen gas, and control the temperature 1100℃, the annealing time is 1h;

[0067] (3) ultrasonically cleaning the stro...

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Abstract

The invention discloses a preparation method of a mono-crystal strontium titanate substrate with an atomic-scale step structure. The preparation method includes the steps: performing first ultrasonic cleaning on an untreated strontium titanate substrate; corroding the strontium titanate substrate cleaned for the first time by ammonium fluoride-hydrofluoric acid buffer solution; annealing the obtained strontium titanate substrate in high-temperature flowing oxygen atmosphere; performing second ultrasonic cleaning on the annealed strontium titanate substrate to obtain the mono-crystal strontium titanate substrate with the atomic-scale step structure; discharging the obtained mono-crystal strontium titanate substrate with the atomic-scale step structure. According to the preparation method, the mono-crystal strontium titanate substrate can be directionally corroded to form a titanium-oxygen ending surface with the step structure, power of hydrogen is proper, the surface is in an obvious step shape, surface root-mean-square roughness is low, and the whole step surface is free from corrosion holes.

Description

technical field [0001] The invention relates to the technical field of substrate materials, in particular to a single-crystal strontium titanate substrate substrate with an atomic-level step structure and a preparation method thereof. Background technique [0002] Strontium titanate (SrTiO 3 ) substrate is one of the most widely used excellent high temperature superconducting single crystal substrates. In the application of many high-temperature functional materials such as superconducting materials (such as yttrium barium copper oxide), ferroelectric or multiferroic thin film materials (such as bismuth ferrite), strontium titanate single crystal substrate has a good degree of lattice matching, no twins Crystal structure, and excellent physical and mechanical properties, therefore, strontium titanate single crystal substrate has extremely important application value in scientific and production activities. The properties and surface shape of the strontium titanate substrat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B33/02C30B33/10
CPCC30B29/32C30B33/02C30B33/10
Inventor 付振陈燕宁尹志岗原义栋刘芳
Owner BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY
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