Silicon wafer etching method, method for preparing antireflective texture surface on silicon wafer surface and method for etching specific patterns on silicon wafer surface

A silicon wafer surface and silicon wafer technology, applied in the field of semiconductor etching, can solve the problems of high process cost, cumbersome process, metal pollution on the silicon wafer surface, etc.

Active Publication Date: 2019-09-20
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The problem with this technology is that precious metals are needed as catalysts, the process cost is high, and there is metal...

Method used

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  • Silicon wafer etching method, method for preparing antireflective texture surface on silicon wafer surface and method for etching specific patterns on silicon wafer surface
  • Silicon wafer etching method, method for preparing antireflective texture surface on silicon wafer surface and method for etching specific patterns on silicon wafer surface
  • Silicon wafer etching method, method for preparing antireflective texture surface on silicon wafer surface and method for etching specific patterns on silicon wafer surface

Examples

Experimental program
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Effect test

Embodiment 1

[0049] (1) MnO with a particle size of less than 10 μm 2 The powder particles are mixed with the mixed acid solution of HF and HCl to obtain a suspension; the concentration of HCl is 15.4mol / L, the concentration of HF is 14.3mol / L, MnO 2 The concentration is 8.3g / L;

[0050] (2) At room temperature, place diamond wire-cut polysilicon slices horizontally into the bottom of the suspension to make the MnO 2 The particles naturally settled on the silicon wafer, and were removed after etching for 30 minutes;

[0051] (3) Dip the etched silicon wafer into an alkaline washing solution, and perform an alkaline washing at room temperature for 15 s, and the alkaline washing solution is an aqueous NaOH solution with a concentration of 5.0 wt.%.

[0052] (4) At room temperature, immerse the silicon chip after the alkali cleaning in the pickling solution, pickle for 2min, and the pickling solution is a mixed aqueous solution of HF and HCl, wherein the concentration of HF is 2.8mol / L, and...

Embodiment 2

[0055] (1) MnO with a particle size of less than 10 μm 2 The powder particles are mixed with the mixed acid solution of HF and HCl to obtain a suspension; the concentration of HCl is 15.4mol / L, the concentration of HF is 14.3mol / L, MnO 2 The concentration is 16.7g / L;

[0056] (2) Carry out standard RCA cleaning to the polysilicon wafer cut by diamond wire;

[0057] (3) At room temperature, place the diamond wire-cut polysilicon slices cleaned in step (2) horizontally into the bottom of the suspension, so that the MnO 2 The particles naturally settled on the silicon wafer, and were removed after etching for 8 minutes;

[0058] (4) Dip the etched silicon wafer into an alkaline washing solution, and perform an alkaline washing at room temperature for 15 s, and the alkaline washing solution is an aqueous NaOH solution with a concentration of 5.0 wt.%.

[0059] (5) At room temperature, immerse the silicon chip after the alkali cleaning in the pickling solution, pickle for 2min, ...

Embodiment 3

[0062] (1) MnO with a particle size of less than 10 μm 2 The powder particles are mixed with the mixed acid solution of HF and HCl to obtain a suspension; the concentration of HCl is 19.8mol / L, the concentration of HF is 22.6mol / L, MnO 2 The concentration is 33.3g / L;

[0063] (2) Carry out the APM (SC-1) and HPM (SC-2) cleaning in the standard RCA cleaning of the polysilicon wafer cut by diamond wire in sequence;

[0064] (3) At room temperature, place the diamond wire-cut polysilicon slices cleaned in step (2) horizontally into the bottom of the suspension, so that the MnO 2 The particles naturally settled on the silicon wafer, and were removed after etching for 10 minutes;

[0065] (4) Dip the etched silicon wafer into an alkaline washing solution, and perform an alkaline washing at room temperature for 15 s, and the alkaline washing solution is an aqueous NaOH solution with a concentration of 5.0 wt.%.

[0066] (5) At room temperature, immerse the silicon chip after the ...

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Abstract

The invention provides a silicon wafer etching method, a method for preparing an antireflective texture surface on the silicon wafer surface and a method for etching specific patterns on the silicon wafer surface, and belongs to the technical field of semiconductor etching. A solid MnO2 is used as oxidant, HF and other non-oxidizing acid are used for providing an acidic environment for enhancing the oxidizability of the solid MnO2. The solid MnO2 shows oxidation in the acidic environment and contacts the silicon wafer to oxidize the silicon, the generated SiO2 is etched by the HF acid, and the exposed new silicon surface contacts the solid MnO2 for further oxidation. As the reaction proceeds, the etched structure is formed at the position where the silicon wafer contacts the solid MnO2, and the solid MnO2 is finally reduced to the soluble Mn2+ ions. The method can be used for fixed etching at the place of the silicon wafer surface requiring etching and can also be used for preparation of the antireflective texture surface on the surface of polysilicon wafer, and the texture surface with low reflectivity can be obtained without using precious metal or nitric acid.

Description

technical field [0001] The invention relates to the technical field of semiconductor etching, in particular to a method for etching a silicon chip, a method for preparing an anti-reflection texture on the surface of a silicon chip and a method for etching a specific pattern on the surface of a silicon chip. Background technique [0002] Etching silicon wafers to form patterned or randomly distributed micro-nano structures is a necessary step in the manufacture of many semiconductor devices. The techniques for etching silicon wafers are mainly divided into dry etching and wet etching. [0003] Dry etching mainly utilizes reactive gas or / and plasma to etch through chemical or / and physical action. A representative method for dry etching of silicon wafers is reactive ion etching (RIE: Reactive Ion Etching), which is usually a combination of reactive gases containing halogen atoms (such as CF 4 / O 2 , SF 6 / O 2 etc.) into the plasma electric field, combined with the chemical...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L31/18H01L31/0236
CPCH01L21/30608H01L31/1804H01L31/02363Y02P70/50
Inventor 刘欢赵雷王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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