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Paste method to reduce defects in dielectric sputtering

A technology for pasting and particle defects, applied in sputtering plating, manufacturing/processing of electromagnetic devices, circuits, etc., can solve problems such as charge accumulation, dropped chips, and particle shedding

Inactive Publication Date: 2019-09-20
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the target material is a dielectric, dielectric deposition on the shield causes charge buildup which can lead to arcing in the process chamber
Arcing can cause particles to dislodge from the dielectric layer on the inner surface and fall onto the wafer being processed
Particle generation can lead to a large number of defects in the deposited layer of the wafer

Method used

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  • Paste method to reduce defects in dielectric sputtering
  • Paste method to reduce defects in dielectric sputtering
  • Paste method to reduce defects in dielectric sputtering

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Embodiment Construction

[0018] Provided herein are embodiments of tantalum (Ta) target paste processing for PVD processing chambers. The method of the present invention utilizes a Ta target sputtering process to paste at least a portion of the inner surface of the processing chamber after the dielectric material is deposited on the wafer. The Ta paste encloses dielectric material that has been inadvertently sputtered on interior surfaces of the process chamber (eg, shields). Ta paste greatly reduces the number and size of defects caused by particles from the dielectric material falling into the deposited film. Additional processing is used to enhance the effectiveness of the Ta paste to further reduce both defects and contamination of the deposited film or layer.

[0019] In certain embodiments, a PVD chamber, such as a multi-cathode PVD chamber (eg, process chamber 100 ), includes a plurality (eg, 5 cathodes) cathodes 102, 103, a plurality of cathodes 102, 103 having a corresponding plurality of t...

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Abstract

Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.

Description

technical field [0001] Embodiments of the present disclosure generally relate to substrate processing chambers used in semiconductor fabrication systems. Background technique [0002] Sputtering, also known as physical vapor deposition (PVD), is a method of forming features in integrated circuits. A layer of material is sputter deposited on the substrate. The source material (eg, the target material) is bombarded with ions strongly accelerated by the electric field. The bombardment ejects material from the target, which is then deposited on the substrate. During deposition, the ejected particles may travel in a different direction than generally normal to the substrate surface, which can undesirably result in a layer of source material on the internal structure of the processing chamber. [0003] Undesirable coatings of internal structures, such as shields or other interior surfaces of the processing chamber, can cause defects and contamination in subsequent wafer process...

Claims

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Application Information

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IPC IPC(8): C23C14/56C23C14/18C23C14/34H01J37/32
CPCC23C14/352C23C14/3464C23C14/081C23C14/185C23C14/5853H01J37/3447H01J37/3429H01J37/3405H10N50/01C23C14/564C23C14/3414H01J37/32477H01J37/32559H01J37/32651C23C14/14H01J37/3417
Inventor 晓东·王王荣钧寒冰·吴
Owner APPLIED MATERIALS INC