Electronically controlled magnon valve structure based on sound body wave excitation

A bulk acoustic wave and magneton valve technology, which is applied in the direction of magnetic field-controlled resistors, circuits, electrical components, etc., can solve the problem of inability to reflect the overall regulation of the effect of the electric field on the device, the volatile nature of the electric control, and the lack of formation Prototype device and other issues
CN110299446AActive Publication Date: 2019-10-01HUAZHONG UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HUAZHONG UNIV OF SCI & TECH
Publication Date
2019-10-01

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Abstract

The invention belongs to the field of memory devices and discloses an electronically controlled magnon valve structure based on sound body wave excitation. The structure comprises a film acoustic waveresonator substructure, a magnon valve substructure and a ferroelectric exchange bias heterojunction substructure which are on a substrate (1) from the top to bottom. The film acoustic wave resonatorsubstructure is used for providing acoustic wave excitation to a magnetic valve substructure. The resonance frequency and amplitude of an acoustic wave generated by the regulation of the film acoustic wave resonator substructure is used to achieve ferromagnetic resonance to excite the size of a magnetic substream in the magnon valve structure, therefore, the conduction and cutoff of the magneticvalve structure are achieved, and the excitation of the magnon valve substructure and the magnon valve effect thereof are achieved. By improving a key excitation mode of a magnon valve and other substructures which are correspondingly matched and set, the structure can adjust the resonance frequency and amplitude through FBAR to achieve the ferromagnetic resonance to excite the size of the magnetic substream in the magnon valve structure, the on and off of a device are achieved, and a storage function is achieved.
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Description

technical field

[0001] The present invention belongs to the field of memory, and more specifically relates to an electronically controlled magneton valve structure based on bulk acoustic wave excitation. Taking advantage of the advantages of short transmission path, low loss, high operating frequency and easier resonance with spin waves when bulk acoustic waves propagate in the direction perpendicular to the device film, it is a new type of memory device structure, especially suitable for applications at room temperature. Background technique

[0002] For half a century, the transistor technology that regulates the conductivity of semiconductors by an electric field has developed rapidly, verifying the Moore's Law proposed in 1965. At present, the CMOS integration process has been developed to below 5nm. Without changing the basic mode of transistor technology, only from the physical scale, Moore's Law will be unsustainable. In order to meet the development requirements of ...

Claims

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