Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Free-standing ultrafine nanocrystalline diamond thick film

A diamond thick film, ultra-fine nanotechnology, applied in the field of diamond materials, can solve problems such as large grain size, increased processing procedures and costs, and restrictions on the large-scale industrial application of micron diamonds

Active Publication Date: 2019-10-11
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF6 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Microcrystalline diamond (grain size greater than 100nm) has good crystallinity, large grain size, no anisotropy, high hardness, but low fracture toughness, and large surface roughness of the film layer. Laser treatment is usually required before use. Cutting and polishing process increase the processing procedure and cost, thus limiting the large-scale industrial application of micro-diamond

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Free-standing ultrafine nanocrystalline diamond thick film
  • Free-standing ultrafine nanocrystalline diamond thick film
  • Free-standing ultrafine nanocrystalline diamond thick film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] A silicon (100) surface with a diameter of 50-100 millimeters and a thickness of 500-3000 micrometers is used for chemical vapor deposition of an ultrafine nanocrystalline diamond thick film. Before deposition, in order to increase the nucleation density of diamond to grow ultrafine nanocrystalline diamond, it is necessary to grind the silicon wafer with ultrafine nanocrystalline diamond powder to form many nanogrooves on the surface of the silicon wafer to promote the nucleation of diamond. The particle size of ultra-fine nanocrystalline diamond powder is 5-15 nanometers, and the silicon wafer is ground by manual grinding. After the ground silicon wafer is ultrasonically cleaned with deionized water, it is ultrasonicated in an alcohol suspension containing ultrafine nanocrystalline diamond powder, and seeds are placed on the surface of the silicon wafer, and the ultrasonic time is 5-30 minutes. High-density ultrafine nanocrystalline diamond powder will remain on the su...

Embodiment 2

[0069] Adopt the method for embodiment 1 to prepare self-supporting ultrafine nanocrystalline diamond thick film, difference is: the height of hot wire distance sample is 14 millimeters, growth pressure 1.5kPa, methane concentration 2%, inert gas concentration 10%, growth time 30-1000 hours to complete the growth of ultra-fine nanocrystalline diamond thick film.

[0070] Figure 8 It is a plane scanning electron micrograph of ultrafine nanocrystalline diamond thick film. From Figure 8 It can be seen from the figure that the crystal grains of the diamond thick film are still ultrafine nanocrystals, and compared with Example 1, the needle-like clusters are more obvious.

[0071] Figure 9 It is ultrafine nanocrystalline diamond thick film Raman spectrum. From Figure 9 It can be seen from the figure that there are 6 Raman peaks of the diamond thick film, at 1134, 1192, 1332, 1350, 1470, 1550cm -1 , is a typical Raman spectrum of nanocrystalline diamond.

[0072] After test...

Embodiment 3

[0074] Adopt the method for embodiment 1 to prepare self-supporting ultrafine nanocrystalline diamond thick film, difference is: the height of hot wire distance sample is 15 millimeters, growth pressure 1.5kPa, methane concentration 2%, inert gas concentration 10%, growth time 30-1000 hours to complete the growth of ultra-fine nanocrystalline diamond thick film.

[0075] Figure 10 It is a plane scanning electron micrograph of ultrafine nanocrystalline diamond thick film. From Figure 10 It can be seen from the figure that the crystal grains of the diamond thick film are still ultrafine nanocrystals. Compared with Example 1, the distribution of diamond grains is no longer needle-like clusters.

[0076] Figure 11 It is ultrafine nanocrystalline diamond thick film Raman spectrum. From Figure 11 It can be seen from the figure that there are 6 Raman peaks of the diamond thick film, at 1134, 1192, 1332, 1350, 1470, 1550cm -1 , is a typical Raman spectrum of nanocrystalline ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a free-standing ultrafine nanocrystalline diamond thick film. The free-standing ultrafine nanocrystalline diamond thick film is characterized in that the thickness of the thickfilm is 100-3000 micrometers, and the diamond grain size is not less than 1 nanometer and not greater than 20 nanometers. According to the thick film, by employing a chemical vapor deposition method,an ultrafine nanocrystalline diamond is grown on a silicon substrate, and then, the silicon substrate and the diamond are separated to obtain the free-standing ultrafine nanocrystalline diamond thickfilm. The invention provides the simple and effective chemical vapor deposition method, and the free-standing ultrafine nanocrystalline diamond thick film is prepared.

Description

technical field [0001] The invention relates to a self-supporting ultrafine nanocrystalline diamond thick film, which belongs to the field of diamond materials. Background technique [0002] Due to the special crystal structure and bonding form, diamond has many excellent properties such as high hardness, wear resistance and corrosion resistance, high melting point, wide band gap, high light transmittance, excellent physical and chemical stability, etc. It is used in mechanical processing, marine dynamic sealing , MEMS, field emission, optical windows, electrochemistry, acoustics, biomedicine and other fields have a wide range of applications. [0003] At present, there are two common types of diamonds, namely single crystal diamond and polycrystalline diamond. Single crystal diamond has excellent performance, but natural single crystal diamond is rare, expensive, and small in size, and is mainly used in the jewelry industry. Industrial single crystal diamond is often prep...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/01C23C16/27
CPCC23C16/01C23C16/272C23C16/271C23C16/0254C23C16/50
Inventor 江南李赫王博易剑曹阳
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com