Wavelength-combined laser device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Publication Date
- 2019-10-25
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Abstract
Description
technical field
[0001] The present invention relates to a wavelength-coupled laser device that combines laser light emitted from a plurality of light emitting parts of a semiconductor laser. Background technique
[0002] As an example of a laser oscillator that combines light emitted from many semiconductor laser diodes (Laser Diode: LD) (hereinafter referred to as LD light), there is a wavelength coupling type resonator using a diffraction grating as a wavelength coupling element.
[0003] In recent years, in processes such as cutting and welding of metals, LD light having a wavelength of 900 nm or 1000 nm and having a high photoelectric conversion efficiency has been directly used. However, in these applications, the focal power of a single LD light, i.e., the light emitted from one light emitting layer of a semiconductor element, that is, the active layer stripe, is limited. Therefore, in order to obtain laser light with high power, light from a plurality of light emittin...