Silicon substrate cleaning method

Abstract

The invention provides a silicon substrate cleaning method. The silicon substrate cleaning method comprises steps that the silicon substrate with carbon nanotubes and other impurities remaining is obtained, and the silicon substrate is polished through plasma beams; the silicon substrate after plasma beam polishing is chemically cleaned with acid solution; and silicon substrate after chemical cleaning is subjected to physical cleaning; the silicon substrate physical cleaning is blown dry, and then a reusable silicon substrate is obtained. The method is advantaged in that the silicon surface color is uniform and consistent after cleaning, a spot and ash stamp problem is eliminated, and the secondary carbon nanotube growth test shows that the carbon nanotube output reaches 92-98% of new silicon wafers, which basically met target requirements.

Description

technical field

[0001] The invention belongs to a silicon chip cleaning process, in particular to a cleaning method for a silicon substrate with carbon nanotube residues on the surface. Background technique

[0002] In recent years, with the in-depth research on carbon nanotubes and nanomaterials, the demand for carbon nanotubes is increasing, and its broad application prospects are constantly showing. Carbon nanotubes, also known as bucky tubes, are one-dimensional quantum materials with a special structure (the radial dimension is on the order of nanometers, the axial dimension is on the order of microns, and both ends of the tube are basically sealed). Carbon nanotubes are mainly coaxial tubes with several to tens of layers of carbon atoms arranged in a hexagonal shape. A fixed distance is maintained between layers, about 0.34nm, and the diameter is generally 2 to 20nm. And according to the different orientations of the carbon hexagon along the axial direction, it can b...

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