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Preparation method for NaV6O15 film and prepared NaV6O15 film

A thin film and substrate technology, applied in the field of NaV6O15 thin film, can solve problems such as the difficulty of preparing thin films of different specifications, and achieve the effects of energy saving, pollution-free reaction conditions, sufficient space, and good reactivity

Inactive Publication Date: 2019-11-19
ANHUI UNIVERSITY OF ARCHITECTURE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this method, if you want to obtain a thicker film, you also need to put the taken out product into a fresh bath to react again. It is difficult to prepare films of different specifications.

Method used

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  • Preparation method for NaV6O15 film and prepared NaV6O15 film
  • Preparation method for NaV6O15 film and prepared NaV6O15 film
  • Preparation method for NaV6O15 film and prepared NaV6O15 film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] A NaV 6 o 15 The preparation method of thin film, comprises the following steps:

[0063] (1) Weigh 1.6323g VOSO according to the molar concentration ratio of 2:1 4 Prepare a mixed solution with 0.4535g oxalic acid to make it fully complexed;

[0064] (2) Add NaOH solution to adjust pH=3.19, set the volume to 50ml, place the cleaned Si substrate horizontally in the mixed solution prepared in step (1);

[0065] (3) React the mixed solution put into the substrate in step (2) at a constant temperature of 75° C. for 8 hours, take out the substrate, wash it and dry it to obtain a deposited film, which is named deposited film a;

[0066] (4) Take film a, divide it into two parts, take half of it and anneal at 300°C for 2 hours and cool down to room temperature with the furnace to obtain the product film, which is named product film b.

Embodiment 2

[0068] A NaV 6 o 15 The preparation method of thin film, comprises the following steps:

[0069] (1) Weigh 1.6370g VOSO at the ratio of molar concentration 2:1 4 Prepare a mixed solution with 0.4540g oxalic acid to make it fully complexed;

[0070] (2) Add NaOH solution to adjust the pH=3.13, set the volume to 50ml, and place the cleaned Si substrate horizontally in the mixed solution prepared in step (1);

[0071] (3) React the mixed solution put into the substrate in step (2) at a constant temperature of 75° C. for 8 hours, take out the substrate, wash it and dry it to prepare a deposited film;

[0072] (4) Take the deposited film prepared in step (3), divide it into two parts, anneal at 400°C and 500°C for 2h respectively, and cool to room temperature with the furnace to obtain the product film, which is respectively named as product film c and product film d.

Embodiment 3

[0074] A NaV 6 o 15 The preparation method of thin film, comprises the following steps:

[0075] (1) Weigh 1.6362g VOSO according to the ratio of molar concentration 2:1 4 Prepare a mixed solution with 0.4573g oxalic acid to make it fully complexed;

[0076] (2) Add NaOH solution to adjust pH=2.85, set the volume to 50ml, place the cleaned ITO substrate horizontally in the mixed solution prepared in step (1);

[0077] (3) The mixed solution put into the substrate in step (2) was reacted at a constant temperature of 80° C. for 7 hours, and the substrate was taken out, washed and dried to obtain a deposited film, named as deposited film e.

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Abstract

The invention discloses a preparation method for a NaV6O15 film, belonging to the technical field of positive electrode materials of sodium ion batteries. The preparation method includes the followingsteps: (1) preparing a mixed solution of VOS4 and a complexing agent in a certain molar concentration ratio, and carrying out stirring; (2) adjusting the pH value of the mixed solution prepared in step (1) until the mixed solution is acidic and putting the mixed solution into a substrate; (3) subjecting the mixed solution having been put into the substrate in the step (2) to a reaction at a certain constant temperature, taking out the substrate, and carrying out washing and air drying; and (4) annealing the air-dried film on the substrate. The invention has the beneficial effects that NaV6O15films of different specifications can be directly obtained by controlling experimental parameters; a preparation cycle is short; and the morphology of the produced NaV6O15 film varies with differentpost-treatment conditions, and film products of different specifications can be prepared according to different needs.

Description

technical field [0001] The invention relates to the technical field of anode materials for sodium ion batteries, in particular to a NaV 6 o 15 The preparation method of thin film and the NaV that makes 6 o 15 film. Background technique [0002] The rapid development of industry has led to an increase in energy consumption, and the resulting environmental pollution has become increasingly prominent. Therefore, the development of new energy and new energy storage components has become a top priority, and lithium batteries are one of them. Lithium batteries are widely used in portable electronic products such as computers and mobile phones due to their high open circuit voltage, high energy density, no pollution, low cost, long service life, and good cycle stability. In addition, cars that currently use lithium batteries as power equipment are also favored by people. Although lithium-ion batteries have many advantages, due to the limitation of lithium source and subsequent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G31/00
CPCC01G31/00C01P2004/12C01P2004/61C01P2004/62
Inventor 徐海燕陈静阮俊海王爱国
Owner ANHUI UNIVERSITY OF ARCHITECTURE
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