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A kind of ultraviolet LED chip and preparation method thereof

An LED chip and ultraviolet technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of weak resistance to high humidity aging, discounted brightening effect, poor heat dissipation effect, etc., to slow down aging failure, high waterproof, The effect of increasing the brightness

Active Publication Date: 2021-08-24
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As proposed in other published patents, the use of SiO 2 It is a laminated layer, that is, a high and low refraction method to achieve the effect of brightening, but SiO 2 When more Si is doped, its refractive index will become larger, and then stacked with other high-fold film layers, its brightening effect will be greatly reduced
And SiO 2 The thermal conductivity is only 1.4W / m·k, the thicker the film layer, the worse the heat dissipation effect, and the aging process will cause failure due to thermal effects
In addition, SiO 2 As a hydrophilic material, adjusting the ratio of the recipe or increasing the thickness only delays the entry time of water vapor, but cannot essentially avoid the entry of water vapor. This feature makes it weaker in high-humidity aging resistance

Method used

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  • A kind of ultraviolet LED chip and preparation method thereof
  • A kind of ultraviolet LED chip and preparation method thereof
  • A kind of ultraviolet LED chip and preparation method thereof

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Effect test

Embodiment 1

[0065] Such as Figure 1-4 As shown, in this embodiment, the light-emitting epitaxial layer 100-11 is formed above the substrate 100, and the light-emitting epitaxial layer includes a first semiconductor layer 102, an active layer 103, and a first semiconductor layer sequentially formed above the substrate 100. The second semiconductor layer 104 of opposite conductivity type. The above-mentioned first semiconductor layer 102 forms the first mesa 100-1 of the light-emitting epitaxial layer 100-11 (refer to the attached Figure 4 As shown), the active layer 103 and the second semiconductor layer 104 form the second mesa 100-2 of the light emitting epitaxial layer 100-11.

[0066] In a preferred embodiment of this embodiment, the substrate may be a sapphire substrate, the first semiconductor layer 102 may be an N-type semiconductor layer, and the N-type semiconductor layer may include, for example, an AlN / AlGaN superlattice layer, The heavily doped N-type AlGaN layer, the light...

Embodiment 2

[0076] This embodiment also provides a method for preparing an ultraviolet LED chip, such as Figure 4 As shown, the method includes the following steps:

[0077] forming a light-emitting epitaxial layer, sequentially depositing a first semiconductor layer, an active layer, and a second semiconductor layer having a conductivity type opposite to that of the first semiconductor layer, the first semiconductor layer forming a first mesa of the light-emitting epitaxial layer, The active layer and the second semiconductor layer form a second mesa of the light emitting epitaxial layer;

[0078] An insulating protection layer is formed above the light-emitting epitaxial layer, the insulating protection layer covers the surface and side surfaces of the first mesa and the second mesa, and the insulating protection layer includes an insulating layer containing Al.

[0079] The light-emitting epitaxial layer can be formed by methods commonly used in the art. Such as Figure 5 As shown,...

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Abstract

The present invention provides an ultraviolet LED chip and a preparation method thereof. The ultraviolet LED chip includes a light-emitting epitaxial layer, and the light-emitting epitaxial layer includes a first mesa and a second mesa, and is formed on the surfaces of the first mesa and the second mesa and The insulating protective layer on the side, the insulating protective layer includes an insulating layer containing Al, and can form a single-layer or multi-layer stacked structure. The use of an insulating protective layer containing Al can reduce the replacement of Al ions in the epitaxial layer, and can effectively compensate for the lack of Al ions in the epitaxial layer during the chip manufacturing process, and will not affect the Si doping in the epitaxial layer, so as not to damage the epitaxial layer , to avoid aging failure of the epitaxial layer. The insulating protection layer containing Al has a low absorption rate in the ultraviolet band, and when the insulating layer containing Al is formed in a multilayer structure, a laminated structure of insulating films with high and low refractive indices can be formed, thereby achieving the purpose of brightening.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to an ultraviolet LED chip and a preparation method thereof. Background technique [0002] LED (light emitting diode, light emitting diode) is a semiconductor device that uses energy released when carriers recombine to form light. Among them, ultraviolet LED (UV LED), especially the huge application value of deep ultraviolet LED has aroused people's high attention and has become a new research hotspot. [0003] The insulating protective layer of UV LED products currently on the market usually uses SiO 2 . During the process of depositing the insulating protective layer, the insulating protective layer not only covers the P-AlGaN and its metal contact layer, but also covers the position of the scribe line and the quantum hydrazine. Therefore, when depositing SiO 2 In the process (whether PECVD or ALD is used), the deposition temperature needs to be above 240°C to a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/44H01L33/46H01L33/00
CPCH01L33/44H01L33/46H01L33/0075H01L2933/0025
Inventor 黄敏刘小亮彭康伟林素慧
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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