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Method for manufacturing semiconductor device and semiconductor device

A manufacturing method and semiconductor technology, applied in the field of semiconductor device and semiconductor device manufacturing, can solve the problems of hindering thermal diffusion, low thermal conductivity, inability to properly improve the heat dissipation performance of semiconductor devices, etc., and achieve the effect of good heat dissipation and heat resistance.

Pending Publication Date: 2019-11-26
梁剑波
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the module structure of semiconductor devices as described above in the prior art has the following problems: that is, in the traditional module structure, between the semiconductor element and the diamond, and between the diamond and the heat sink, respectively set the solder, An intermediate layer formed by solder, metal thin film, etc. Compared with diamond, these materials have very low thermal conductivity, and the intermediate layer arranged between the semiconductor element and diamond tends to form a heat insulation barrier, causing the intermediate layer to hinder thermal diffusion. , and there is a possibility that the heat dissipation performance of the semiconductor device cannot be properly improved

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  • Method for manufacturing semiconductor device and semiconductor device
  • Method for manufacturing semiconductor device and semiconductor device
  • Method for manufacturing semiconductor device and semiconductor device

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specific Embodiment approach

[0035] The specific embodiments are as follows, and an embodiment related to one of the present invention will be described with reference to the accompanying drawings (hereinafter also referred to as an "embodiment of the present invention"). However, the present embodiment described below is merely an example of the present invention in any respect. It goes without saying that various improvements and modifications can be made without departing from the scope of the present invention. In other words, when implementing the present invention, the specific configuration according to the present embodiment can be appropriately adopted. In the following description, for ease of explanation, the description will be made with reference to the directions in the drawings.

[0036] According to the embodiment of the present invention, figure 1 Schematic diagram of the structure of the semiconductor device of the present invention, with figure 1 The configuration of the semiconductor dev...

specific Embodiment

[0059] Specific embodiment: A silicon substrate and a diamond substrate are prepared, and in a bonding device, the silicon substrate and the diamond substrate are bonded by a surface activation bonding method. In addition, a heat sink is further prepared, and the diamond substrate and the heat sink are bonded to each other in a bonding device by a surface activation bonding method. According to this example, a semiconductor device can be obtained. The conditions of each component and the surface activation bonding method are as follows.

[0060] Example conditions

[0061] Silicon substrate: n-Si (100) (22mm×15mm×0.56mm);

[0062] Diamond substrate: single crystal diamond (4 mm×4 mm×0.57 mm);

[0063] Radiator: aluminum plate (22 mm×15 mm×0.5 mm);

[0064] Joining equipment: room temperature joining device manufactured by Musashino Engineering Co., Ltd.;

[0065] Bonding conditions of silicon substrate and diamond substrate: irradiate fast argon atomic beam under vacuum condition, und...

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Abstract

The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device. The manufacturing method includes the steps of: preparing a silicon substrate having a first surface and a second surface opposed to each other; preparing a diamond substrate having first surface and a second surface opposed to each other; directly bonding the second surface of the silicon substrate and the first surface of the diamond substrate by a surface activation bonding method, and then performing a thermal treatment to obtain a silicon carbide layer; and directly bonding a heat sink and the second surface of the diamond substrate by the surface activation bonding method and forming a semiconductor element on the first surface of the silicon substrate to finally form the semiconductor device which has good heat dissipation and heat resistance.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a method for manufacturing a semiconductor device and a semiconductor device. Background technique [0002] It has been proposed in the prior art to use solder to combine an integrated circuit package containing semiconductor elements and an aluminum substrate with aluminum nitride (ALN) as the base material, and then directly bond the aluminum substrate and the heat sink to a module structure formed by welding; in addition, It has been proposed to combine the silicon carbide substrate of the power element and the single crystal diamond through an intermediate layer made of a metal thin film, and then combine the single crystal diamond and the heat sink by welding to form a module structure. Due to the relatively high thermal conductivity of diamond, the heat dissipation performance of semiconductor devices can be improved by adding diamond to semiconductor components. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18H01L23/373
CPCH01L21/187H01L23/3732
Inventor 梁剑波
Owner 梁剑波