Eight-path power synthesis harmonic control power amplification circuit suitable for radio frequency power amplifier

Abstract

The invention belongs to the technical field of integrated circuit design, and particularly relates to an eight-path power synthesis harmonic control circuit suitable for a radio frequency power amplifier. The radio frequency power amplifier is composed of a first-stage power pre-amplification circuit, a second-stage power pre-amplification circuit and an output-stage main power amplification circuit. The main power amplification circuit is composed of a power amplification circuit, an eight-path current-voltage mode power synthesis 1: 2 on-chip transformer and a harmonic control circuit. Thepower amplification circuit is composed of a blocking capacitor, a bias resistor and an NMOS power tube. According to the transformer, under the condition that the optimal load impedance is not changed, a plurality of high-output-power amplifying circuits are additionally arranged, the influence caused by parasitic capacitance is relieved, the output power is remarkably improved, and the high output power which is very difficult to achieve through the CMOS technology is achieved. According to the scheme, the multiple power amplification stages are connected, the output power can be remarkablyimproved, and the power amplifier can be used as a radio frequency power amplifier and can also be applied to multiple devices with the power amplification function.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to an eight-way power synthesis harmonic control power amplification circuit suitable for radio frequency power amplifiers. Background technique [0002] In recent years, the wireless communication industry has undergone tremendous changes. Wireless communication technology has greatly improved people's quality of life. The rapid and sustainable development of global wireless communication technology has become one of the cores of industrial development in the 21st century. With the rapid growth of wireless communication, one of the most important ways for manufacturers of wireless terminals to increase revenue is to reduce the cost of terminals. In the design of RF power amplifiers, due to their requirements on output power and linearity, most of the mainstream power amplifiers are designed using GaAs or SiGe. If the cost is to be further reduced, then the h...

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Problems solved by technology

[0003] Due to the low breakdown voltage of active devices in the CMOS process, the power supply voltage is often lower than 2V in the case of non-withstand voltage. If a very large power is to be output, the size of the tube must be very large, which will cause It leads to two serious problems. One is that the parasitic capacitance of the tube is large, so that at higher frequencies, the gain of the power amplifier becomes very low, making the nonlinearity very strong. The second is that such a large current gives the layout The design has brought great difficulties, and such a large current will also make the loss caused by the parasitic resistance extremely obvious, reduce the efficiency of the power amplifier, and also bring a severe test to the heat dissipation. Such problems make the design High-power CMOS RF power amplifiers are very difficult, and power combining technology can alleviate this problem well, and if you want to obtain an output power above 2W, it is almost inevitable to use eight-way power combining

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