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Semiconductor micron wire and preparation method thereof, and optical fiber stress sensor and preparation method thereof

A technology of optical fiber stress and micron wires, applied in the field of stress sensors, can solve problems such as increased device cost, leakage, and violation of biocompatibility, and achieve good flexibility and high safety effects

Active Publication Date: 2019-12-10
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional electronic stress sensors are mainly prepared based on metal and semiconductor materials. Due to their many disadvantages, the further application of stress sensors is hindered.
For example: the use of metal electrodes violates the principle of biocompatibility; the use of external power sources increases the cost of devices; at the same time, electronic devices are also extremely vulnerable to electromagnetic interference, and there are safety issues such as leakage

Method used

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  • Semiconductor micron wire and preparation method thereof, and optical fiber stress sensor and preparation method thereof
  • Semiconductor micron wire and preparation method thereof, and optical fiber stress sensor and preparation method thereof
  • Semiconductor micron wire and preparation method thereof, and optical fiber stress sensor and preparation method thereof

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preparation example Construction

[0051] The present invention also provides a method for preparing the semiconductor microwire described in the above technical solution, comprising the following steps:

[0052] On the substrate, grow undoped GaN nucleation layer, heavily doped GaN layer, undoped n-type GaN layer, In 0.16 Ga 0.84 N / GaN multiple quantum well layer or In 0.8 Ga 0.2 N / GaN multi-quantum well layer, p-type Al 0.1 Ga 0.9 N layer and p-type GaN layer to obtain an epitaxial structure;

[0053] Coating a layer of photoresist on the surface of the p-type GaN layer to obtain a photoresist layer;

[0054] Patterning the photoresist layer to obtain a striped pattern;

[0055] Using the striped pattern as a mask, performing ICP etching on the epitaxial structure until the heavily doped GaN layer leaks out, removing the glue, and obtaining an intermediate product containing a striped array of micron lines;

[0056] Laser cutting the intermediate product containing the array of micron wire stripes into...

Embodiment 1

[0091] Using the MOCVD method, an undoped GaN nucleation layer (480°C, 40Torr, 2μm), a heavily doped GaN layer (980°C, 40Torr, doped with Si, and a doping concentration of 1.0×10) were sequentially grown on a sapphire substrate. 19 cm -3 , 2.5μm), undoped n-type GaN layer (980℃, 40Torr, 2μm), In 0.16 Ga 0.84 N / GaN multiple quantum well layer (700℃, 200Torr, In 0.16 Ga 0.84 The total thickness of N is 3nm, the total thickness of GaN is 10nm), p-type Al 0.1 Ga 0.9 N layer (980°C, 40Torr, 20nm) and p-type GaN layer (980°C, 40Torr, 170nm) to obtain an epitaxial structure;

[0092] Spin-coating a layer of photoresist with a thickness of 3 μm on the upper surface of the p-type GaN layer to obtain a photoresist layer;

[0093] After UV exposure (power 9mW, exposure 10s) on the photoresist layer with the stripe mask, put it into the developing solution (AZ400K) for 90s of immersion treatment and drying to obtain a stripe pattern (the width of the stripe is 5 μm, corresponding to...

Embodiment 2

[0101] Using the MOCVD method, an undoped GaN nucleation layer (480°C, 40Torr, 2μm), a heavily doped GaN layer (980°C, 40Torr, doped with Si, and a doping concentration of 1.0×10) were sequentially grown on a sapphire substrate. 19 cm -3 , 2.5μm), undoped n-type GaN layer (980℃, 40Torr, 2μm), In 0.8 Ga 0.2 N / GaN multiple quantum well layer (700℃, 200Torr, In 0.8 Ga 0.2 The total thickness of N is 3nm, the total thickness of GaN is 10nm), p-type Al 0.1 Ga 0.9 N layer (980°C, 40Torr, 20nm) and p-type GaN layer (980°C, 40Torr, 170nm) to obtain an epitaxial structure;

[0102] Spin-coating a layer of photoresist with a thickness of 3 μm on the upper surface of the p-type GaN layer to obtain a photoresist layer;

[0103] After UV exposure (power 9mW, exposure 10s) on the photoresist layer with the stripe mask, put it into the developer (AZ400K) for 90s of soaking treatment and drying to obtain a stripe pattern (the width of the stripe is 10 μm, which corresponds to The dista...

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Abstract

The invention relates to the technical field of stress sensors, in particular to a semiconductor micron wire and a preparation method thereof, and an optical fiber stress sensor and a preparation method thereof. In the cross section direction, the semiconductor micron wire provided by the invention comprises an undoped n-type GaN layer, a multi-quantum well layer, a p-type Al<0.1>Ga<0.9>N layer and a p-type GaN layer which are stacked in sequence. The multi-quantum well layer is an In<0.16>Ga<0.84>N / GaN multi-quantum well layer or an In<0.8>Ga<0.2>N / GaN multi-quantum well layer. The inventionfurther provides an optical fiber stress sensor, which comprises a flexible substrate PET and the semiconductor micron wire coated with PMMA. The semiconductor micron wire coated with the PMMA is arranged on the upper surface of the flexible substrate PET. The optical fiber stress sensor has relatively good flexibility, biocompatibility and safety and relatively high sensitivity.

Description

technical field [0001] The invention relates to the technical field of stress sensors, in particular to a semiconductor micron wire and a preparation method thereof, an optical fiber stress sensor and a preparation method thereof. Background technique [0002] Wearable sensor devices can be combined with soft and elastic human skin to monitor an individual's physical activity, which is crucial for applications such as personalized health monitoring, human motion monitoring, and human-machine interface. To meet the requirements of the above applications, wearable sensors need to be flexible, stretchable, and biocompatible so that they can stretch, bend, and twist like skin during long-term wear. [0003] The stress sensor is a sensor based on measuring the strain generated by the force deformation of the object, which can meet the requirements of the above applications to a certain extent. However, traditional electronic stress sensors are mainly prepared based on metal and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00G01L1/24
CPCG01L1/242H01L33/007H01L33/06H01L33/32
Inventor 王幸福董建奇
Owner SOUTH CHINA NORMAL UNIVERSITY
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