Artificial surface plasmon transmission line based on fractal branch structure and its application thereof
An artificial surface plasma and transmission line technology, applied in electrical components, waveguides, circuits, etc., can solve the problems of limited integrated circuit application and large size, and achieve the effect of strong electromagnetic wave restraint performance, small structure size, and excellent transmission characteristics.
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[0027] Example 1
[0028] Such as figure 1 As shown, the artificial surface plasmon transmission line includes a microstrip line 1 with periodic fractal stubs 2 arranged on the central strip of the microstrip line, and the periodic fractal stubs 2 are distributed on one side of the central strip of the microstrip line.
[0029] In this embodiment, the dielectric substrate material of the microstrip line is Rogers RT5880, the dielectric constant is 2.2, the thickness is 0.508 mm, and the transmission loss angle is 0.0009; the material of the metal thin film transmission line and periodic fractal branches is selected as copper.
[0030] The structure of each periodic unit of the artificial surface plasmon transmission line is as figure 2 As shown, they are the morphologies of the fractal branches of the periodic unit structure after different iterations. The size is selected as: w=25mm, p=7.5mm, a=5.4mm, d r =a-r(r=0,1,2,3), where w represents the width of the substrate, p represents t...
Example Embodiment
[0032] Example 2
[0033] Such as Figure 4 As shown, embodiment 2 is an artificial surface plasmon transmission line designed based on embodiment 1, including a microstrip line 1. The central strip of the microstrip line is provided with periodic fractal stubs 2, and the periodic fractal stubs 2 are distributed On both sides of the center strip of the microstrip line;
[0034] Specifically, the two ends of the artificial surface plasmon transmission line are microstrip feed ends, and the microstrip line width w 1 =1.54mm, ensure the port impedance of 50Ω, design a 6-period transition structure through a and r to achieve impedance matching. The parameters are designed as follows: the first transition period is 3, r=2, a=4.9mm; the second transition Period 4, r=2, a=3.9mm; third transition period 5, r=1, a=3.2mm; fourth transition period 6, r=1, a=2.4mm; fifth transition period 7 , R=0, a=1.4mm; the sixth transition period 8, r=0, a=1.2mm; other main parameters are as follows: micr...
Example Embodiment
[0036] Example 3
[0037] Such as Image 6 As shown, Embodiment 3 is a power divider designed based on Embodiment 2. The power divider is mainly composed of a straight waveguide 9 and two curved waveguides 10, wherein the straight waveguide 9 is divided into two at the bifurcation part 11. They are rotated by α=30° for 4 cycles to form two curved waveguides 10, and a 100Ω resistor 12 is loaded at β=15° in the middle 2 cycles. The power divider also includes three ports, namely port one, 14, Port two 15 and port three 16, in which port two 15 and port three 16 are respectively connected to the transition section 13 of the microstrip and curved waveguide, the parameter setting is: port microstrip line width w 1 =1.54mm, microstrip line width w in curved waveguide 0 =0.77mm, realize impedance matching, other main parameters are as follows: substrate width w 2 =60mm, the length of the gradual change section l 5 =10mm, total length of power divider l 4 = 214.8mm. by Figure 7~8 The S...
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