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Semiconductor device and mehtod for producing same

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Active Publication Date: 2019-12-27
LINTEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, when the flip-chip mounting method is used, the back surface of the semiconductor chip opposite to the circuit surface (bump formation surface) may be exposed.

Method used

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  • Semiconductor device and mehtod for producing same
  • Semiconductor device and mehtod for producing same
  • Semiconductor device and mehtod for producing same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0188] >

[0189] First adhesive compositions (I-1) to (I-4), etc. The first adhesive composition can be used for Each component constituting the first adhesive composition is obtained.

[0190] The order of addition when blending each component is not specifically limited, Two or more components may be added simultaneously.

[0191] When a solvent is used, it may be used by mixing the solvent with any blending ingredients other than the solvent and diluting the blending ingredients beforehand, or without diluting any blending ingredients other than the solvent in advance, by mixing the solvent with these Blending Ingredients are mixed for use.

[0192] The method of mixing the components at the time of blending is not particularly limited, and may be appropriately selected from the following known methods: a method of mixing by rotating a stirrer or a stirring blade; a method of mixing by using a stirrer; and mixing by applying ultrasonic waves. method etc.

[0193] The t...

Embodiment 1

[0472]

[0473] (Preparation (1) of composition for thermosetting resin layer formation)

[0474] To make polymer component (A)-1, epoxy resin (B1)-1, epoxy resin (B1)-2, epoxy resin (B1)-3, thermosetting agent (B2)-1 and curing accelerator (C)-1 was dissolved or dispersed in methyl ethyl ketone so that the ratio of the content of (C)-1 became the value shown in Table 1, and stirred at 23° C., thereby obtaining a resin layer-forming product having a solid content concentration of 55% by mass. Composition (III)-1 was used as a composition for forming a thermosetting resin layer. In addition, description of "-" in the column of the component contained in Table 1 means that the composition for thermosetting resin layer formation does not contain this component. In addition, the content of each component shown in Table 1 is a solid content.

[0475] (Preparation of Adhesive Resin (I-2a))

[0476] Add to an acrylic polymer (molecular weight about 700,000) copolymerized with 2-...

Embodiment 2

[0524] A laminated structure was obtained in the same manner as in Example 1 except for the point where the second protective film was not formed. The multilayer structure obtained here is obtained by bonding a semiconductor chip with a protective film, which has a first protective film on its first surface and does not have a second protective film on its second surface, to a substrate via its bumps.

[0525] And, the obtained laminated structure was evaluated by the method similar to the method of Example 1. The results are shown in Table 2.

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PUM

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Abstract

A method for producing a semiconductor device, which comprises: a step for producing a semiconductor chip with a protective film, said semiconductor chip having a first protective film on a first surface that has a bump or alternatively having a second protective film on a second surface that is on the reverse side of the first surface; and a step for producing a multilayer structure wherein the semiconductor chip with a protective film is bonded to a substrate, with the bump being interposed therebetween. During the production of the semiconductor chip with a protective film, the first protective film is formed such that the upper part of the bump penetrates through and protrudes from the first protective film. The first protective film or the second protective film has such characteristics that enable the multilayer structure to have a shear strength ratio of 1.05 to 2 and a fracture risk factor of -0.9 to 0.9.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method. [0002] This application claims priority based on Japanese Patent Application No. 2017-097994 filed in Japan on May 17, 2017, and uses the content thereof here. Background technique [0003] So far, when mounting multi-pin LSI packages for MPUs or gate arrays on printed wiring boards, the flip chip (Flip chip) mounting method has been used, in which, as a semiconductor chip, a chip formed on its connection pad is used. A semiconductor chip having protruding electrodes (hereinafter, referred to as "bumps" in this specification) formed of eutectic solder, high-temperature solder, gold, etc., these bumps are connected to the chip mounting substrate by the so-called flip-chip method. The corresponding terminal parts on the top face each other and contact each other to perform fusion / diffusion bonding. [0004] Bumps are formed on the circuit surface of the semiconducto...

Claims

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Application Information

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IPC IPC(8): H01L23/29H01L21/60H01L23/31
CPCH01L23/29H01L23/31H01L2224/16225H01L23/3135H01L23/49816
Inventor 山岸正宪
Owner LINTEC CORP