Enhanced heterogeneous metal gate AlGaN/GaN MOS-HEMT device and preparation method thereof

Abstract

The invention discloses an enhanced heterogeneous metal gate AlGaN / GaN MOS-HEMT device and a preparation method thereof. The enhanced heterogeneous metal gate AlGaN / GaN MOS-HEMT device comprises an AlN transition layer located on an Al2O3 substrate, a multi-layer buffer structure positioned on the AlN transition layer, an AlGaN barrier layer positioned on the multi-layer buffer structure, a GaN cap layer positioned on the AlGaN barrier layer, a source electrode and a drain electrode positioned on the first GaN layer and upwards penetrating through the AlGaN barrier layer and the GaN cap layer,a gate oxide layer positioned on the GaN cap layer, the source electrode and the drain electrode, and a heterogeneous gate structure positioned on the gate oxide layer. Thus, the channel driving current can be improved, the threshold voltage can be flexibly adjusted, and deterioration of the channel carrier mobility can be prevented.

Description

technical field [0001] The invention belongs to the technical field of AlGaN / GaN HEMT devices, and in particular relates to an enhanced heterogeneous metal gate AlGaN / GaN MOS-HEMT device and a preparation method thereof. Background technique [0002] The traditional semiconductor materials represented by silicon (Si) and gallium arsenide (GaAs) have gradually failed to meet the development of modern electronic technology under the requirements of radiation resistance, high temperature, high voltage and high power. Wide bandgap semiconductor GaN electronic devices can be used in high temperature, high voltage, high frequency and harsh environments, such as radar and wireless communication base stations and satellite communications. Due to its wide band gap, high breakdown voltage, high electron saturation drift velocity, excellent electrical and optical properties, and good chemical stability, GaN is favored in high-frequency, high-power, high-temperature electronic devices. ...

AI Technical Summary

Problems solved by technology

[0004] Although the industry has made a lot of efforts to improve the device structure of the enhanced AlGaN / GaN HEMT, the effect is not ideal in practical applications, and the conventional AlGaN / GaN HEMT has inherent technical defects

For example, conventional concave gate HEMT devices are difficult to manufacture, the process repeatability is poor, and the uniformity of threshold voltage is not good; the use of fluorine ion implantation or plasma treatment usually causes damage and creates defects in the semiconductor material, thereby reducing the current carrying capacity. submobility etc.

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