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TiNiSn-based Half-Heusler thermoelectric material doped with second phase and preparation method thereof

A technology of thermoelectric materials and raw materials, which is applied in the field of materials, can solve the problems that the shape and size distribution of the in-situ growth of the second phase cannot be effectively controlled, the second phase cannot be effectively regulated, and the process is short, so as to improve the thermoelectric merit value and facilitate The effect of control and short process

Inactive Publication Date: 2020-01-03
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to propose a method for preparing a TiNiSn-based Half-Heusler thermoelectric material doped with a second phase, which has the advantages of short process, few steps and easy control It can effectively solve the problem that the size and distribution of the in-situ growth of the second phase can not be effectively controlled by the traditional method.

Method used

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  • TiNiSn-based Half-Heusler thermoelectric material doped with second phase and preparation method thereof
  • TiNiSn-based Half-Heusler thermoelectric material doped with second phase and preparation method thereof
  • TiNiSn-based Half-Heusler thermoelectric material doped with second phase and preparation method thereof

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Embodiment 1

[0039] This example discloses a TiNiSn-based Half-Heusler thermoelectric material with a second phase doping, which is prepared by batching and smelting according to the atomic ratio of 1:1:1 and 1:2:1 respectively. Single-phase TiNiSn and TiNi 2 Sn. Among them, the atomic percentage of each element of TiNiSn is: Ti: 33.3%; Ni: 33.3%; Sn: 33.3%. TiNi 2 The atomic percentages of each element of Sn are: Ti: 25%; Ni: 50%; Sn: 25%. A further improvement of the present invention is:

[0040] The grain size of the TiNiSn base material obtained after ball milling is 0.5-2 μm. TiNi 2 The grain size of the Sn second phase is 1-10 μm.

[0041] A method for processing a TiNiSn-based Half-Heusler thermoelectric material with second-phase doping, comprising the following steps:

[0042] (1) Material selection: Ti, Ni, and Sn select small particles with a diameter x length of 2 x 5 mm. All samples were ≥99.99% pure. The glove box is equipped with TiNiSn and TiNi according to the no...

Embodiment 2

[0058] (1) Material selection: Ti, Ni, and Sn select small particles with a diameter x length of 2 x 5 mm. All samples were ≥99.99% pure. The glove box is equipped with TiNiSn and TiNi according to the nominal composition of the atomic ratio of 1:1:1 and 1:2:1 respectively 2 Raw materials required for Sn.

[0059] (2) Melting: Using a magnetic levitation melting furnace, under an argon protective atmosphere (10 4 -10 5 Pa), heat up to 1600-1800°C and keep warm for 4 minutes. In order to ensure the uniformity of the structure after smelting, repeat smelting 5 times.

[0060] (3) Ball milling of TiNiSn: first, use a mortar to roughly grind the ingot into a powder with a particle size of 0.1-1 mm. Then wet ball milling was performed under an argon atmosphere. The ball milling medium is absolute ethanol, the ball-to-material ratio is 20:1, the rotational speed is 600r / min, and the ball milling time is 8h.

[0061] (4) Ball milled TiNi 2 Sn: first use a mortar to roughly gri...

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Abstract

The invention provides a TiNiSn-based Half-Heusler thermoelectric material doped with a second phase and a preparation method thereof. The processing method of the thermoelectric material comprises the following steps: preparing TiNiSn and TiNi2Sn raw materials; smelting the TiNiSn and TiNi2Sn raw materials; grinding and drying a TiNiSn cast ingot and a TiNi2Sn cast ingot; preparing a dried TiNi2Sn second phase and a dried TiNiSn matrix with different average grain sizes according to a target component TiNi<1.01-1.20>Sn; performing drying treatment; and sintering prepared powder by adopting adischarge plasma sintering technology to obtain a TiNiSn-based Half-Heusler thermoelectric material doped with a second phase. The method has the advantages of short process, few steps and easiness incontrol. The problem that the morphology, size and distribution of in-situ growth of a second phase prepared by a traditional method cannot be controlled is solved.

Description

technical field [0001] The invention relates to material technology, in particular to a second-phase doped TiNiSn-based Half-Heusler thermoelectric material and a preparation method thereof. Background technique [0002] With the rapid development of renewable energy and energy conversion technologies, the application prospects of thermoelectric materials in the fields of power generation and refrigeration have attracted more and more attention. Thermoelectric materials can realize the direct mutual conversion of thermal energy and electrical energy, and can directly convert solar energy, geothermal energy, motor vehicle and industrial waste heat into electrical energy, and vice versa can also be used as a heat pump to realize cooling according to its inverse effect. Thermoelectric devices have the advantages of being all solid-state, light weight, compact, fast response, and no moving parts. In recent years, Half-Heusler (Half-Heusler) alloys with semiconductor characteris...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/20H01L35/34H10N10/854H10N10/01
CPCH10N10/854H10N10/01
Inventor 康慧君王同敏杨雄陈宗宁郭恩宇李廷举曹志强卢一平接金川张宇博
Owner DALIAN UNIV OF TECH
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