Non-TMAH alkali cleaning solution used after chemical mechanical polishing and preparation method thereof
A cleaning solution and anti-oxidation technology, applied in chemical instruments and methods, organic cleaning compositions, detergent compositions, etc., can solve problems such as high toxicity, strong corrosion, and poor environmental performance
Inactive Publication Date: 2020-01-10
SHANGHAI SINYANG SEMICON MATERIALS
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Problems solved by technology
[0005] The technical problem to be solved by the present invention is to overcome the defects of high toxicity, poor biocompatibility, poor environmental protection performance, strong corrosion, and poor corrosion inhibition caused by the large amount of TMAH in the existing cleaning solution, and provide a cleaning solution for chemical mechanical polishing. Non-TMAH alkali cleaning solution and preparation method thereof
Method used
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Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1-50 and comparative example 1-27
[0057] The raw material components of the cleaning solution: the types and contents of alkali, alcohol amine, antioxidant, corrosion inhibitor, chelating agent and surfactant are listed in Table 1; the raw material water in the cleaning solution is deionized water, deionized Water to make up the balance.
[0058] In the following examples or comparative examples, the cleaning solution is prepared by adding the solid components in the raw material components in the examples or comparative examples to the liquid components and stirring evenly.
[0059] In the following examples, those that do not limit the specific operating temperature all refer to carrying out at room temperature. Room temperature means 10-30°C.
[0060] Table 1
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Abstract
The invention discloses a non-TMAH alkali cleaning solution used after chemical mechanical polishing and a preparation method of the non-TMAH alkali cleaning solution. The cleaning solution disclosedby the invention is prepared from the following raw materials, by mass: 0.01%-25% of an alkali, 0.01%-30% of an alcohol amine, 0.001%-1% of an antioxidant, 0.01%-10% of a corrosion inhibitor, 0.01%-10% of a chelating agent, 0.01%-5% of a surfactant, and the balance water. The non-TMAH alkali cleaning solution provided by the invention has the advantages of excellent corrosion inhibition to copper,cobalt and tungsten, good stability, low toxicity, strong biocompatibility and better environmental protection property.
Description
technical field [0001] The invention relates to a non-TMAH alkali cleaning liquid used for chemical mechanical polishing and a preparation method thereof. Background technique [0002] Metal materials such as copper, aluminum, tungsten, etc. are commonly used wire materials in integrated circuits. Chemical Mechanical Polishing (CMP) has emerged as the primary technique for wafer planarization during device fabrication. Metal chemical mechanical polishing fluids usually contain abrasive particles, complexing agents, metal corrosion inhibitors, oxidants, and the like. Among them, the abrasive particles are mainly silicon dioxide, aluminum oxide, aluminum-doped or aluminum-covered silicon dioxide, ceria, titanium dioxide, polymer abrasive particles, etc. After the metal CMP process, the surface of the wafer will be polluted by metal ions and abrasive particles in the polishing solution, which will affect the electrical characteristics of the semiconductor and the reliability ...
Claims
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IPC IPC(8): C11D1/22C11D3/20C11D3/30C11D3/34C11D3/60H01L21/02
CPCC11D1/22C11D3/0073C11D3/2082C11D3/2096C11D3/30C11D3/349H01L21/02068H01L21/02074
Inventor 王溯马丽史筱超秦长春何加华马伟王亮杨跃
Owner SHANGHAI SINYANG SEMICON MATERIALS