Method for preparing two-dimensional transition metal sulfide through directional transfer CVD method

Abstract

The invention discloses a method for preparing a two-dimensional transition metal sulfide through a directional transfer CVD method. The method comprises the steps of firstly, spin-coating a PMMA filmon a growth substrate on which the two-dimensional transition metal sulfide grows, attaching PDMS to the PMMA film, and separating PDMS, PMMA and the two-dimensional transition metal sulfide from thegrowth substrate by soaking in deionized water; enabling the selected two-dimensional transition metal sulfide and a target position on a target substrate to be on the same vertical plane by using amicroscope, and descending a material displacement platform to enable the two-dimensional transition metal sulfide to be attached to the target position; carrying out heating and heat preservation onthe target substrate to separate PDMS from PMMA; and finally, removing the PMMA film by using acetone to realize the positioning transfer of the two-dimensional transition metal sulfide. According tothe method, the growth substrate does not need to be etched by using a strong alkali solution, the two-dimensional transition metal sulfide is safely, environment-friendly, simply and completely positioned and transferred to the target substrate, and the method can be widely applied to the preparation of novel two-dimensional transition metal sulfide electronic devices.

Description

technical field [0001] The invention relates to a method for preparing two-dimensional transition metal sulfides by directional transfer CVD. Background technique [0002] With the successful preparation of single-layer graphene, there has been a strong impact on the development of materials. Although single-layer graphene has high thermal conductivity and room temperature electron mobility, single-layer graphene does not have a band gap, which makes its application restricted. Studies have found that two-dimensional transition metal sulfides have excellent properties such as strong luminous efficiency, high electron mobility, and direct band gap structure. Therefore, it can be used to manufacture micro-nano electronic devices such as light-sensitive electrical detectors, light-emitting diodes, and field-effect transistors with high on-off specific current ratios. [0003] At present, the preparation method of two-dimensional transition metal sulfides is mainly chemical va...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing two-dimensional transition metal sulfides by directional transfer CVD, so as to overcome the damage to the material surface caused by wet etching silicon oxide wafers in the prior art, difficulty in transfer on sapphire and other methods The problem of high evaporation requirements and the introduction of impurities

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