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Method for manufacturing silicon single crystal ingot and silicon single crystal growing apparatus

A monocrystalline silicon ingot and a manufacturing method technology, applied in the field of monocrystalline silicon cultivation devices, capable of solving the problems of low yield of n-type monocrystalline silicon ingots and the like

Active Publication Date: 2020-01-10
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The segregation coefficient of P, 0.35, is much smaller than that of B (boron), 0.8. When cultivating crystals with the target resistance range on the total crystal length, the yield of n-type monocrystalline silicon ingots is lower than that of p-type monocrystalline silicon ingots.

Method used

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  • Method for manufacturing silicon single crystal ingot and silicon single crystal growing apparatus
  • Method for manufacturing silicon single crystal ingot and silicon single crystal growing apparatus
  • Method for manufacturing silicon single crystal ingot and silicon single crystal growing apparatus

Examples

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Embodiment

[0088] Next, in order to further clarify the effects of the present invention, the following examples are given, but the present invention is not limited by the following examples.

[0089] (Invention Example 1)

[0090] use figure 2 The single crystal silicon growing device 100 shown grows a single crystal silicon ingot with a diameter of 300 mm and a straight body length of 1800 mm by the CZ method. First, 350 kg of a polycrystalline silicon raw material was put into a 32-inch quartz crucible 20, and the polycrystalline silicon raw material was dissolved in an argon atmosphere. Next, Sb (antimony) was added as an n-type dopant. At this time, the dopant dose was adjusted so that the resistivity at the starting position of the straight body of the single crystal silicon ingot became 50 Ω·cm. In addition, the target resistivity of the crystal was set to 50Ω·cm±7% in the axial direction. Then, the seed crystal is immersed in the silicon melt 10, and the seed crystal is grad...

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Abstract

Provided are: a method for manufacturing an n-type high-resistance silicon single crystal ingot which is suitable for use as a power device and has a small tolerance of resistivity in the crystal growth direction; and a silicon single crystal growing apparatus. The present invention pertains to a method for manufacturing a silicon single crystal ingot, in which Sb or As is used as an n-type dopant, by means of a silicon single crystal growing apparatus using the Czochralski process, the method comprising: a measuring step for measuring the gas concentration of a compound gas containing the n-type dopant as a constituent element while pulling up a silicon single crystal ingot 1; and a pull-up condition value adjustment step for adjusting pull-up condition values such that the measured gas concentration falls within the range of a target gas concentration, the pull-up condition values including at least one of the pressure in a chamber 30, the flow rate of Ar gas, and the gap G between aguiding portion 70 and a silicon melt 10.

Description

technical field [0001] The invention relates to a method for manufacturing a single crystal silicon ingot and a single crystal silicon cultivation device. In particular, it relates to a method for manufacturing an n-type single crystal silicon ingot suitable for manufacturing an n-type silicon wafer for an insulated gate bipolar transistor (IGBT), and a single crystal silicon growing device. Background technique [0002] Silicon wafers used as substrates for semiconductor devices are final cleaned by slicing single crystal silicon ingots grown by single crystal silicon growth equipment into thin slices, and undergoing a plane grinding (polishing) process, an etching process, and a mirror polishing (polishing) process to manufacture. In addition, large-diameter silicon single crystals of 300 mm or more are generally produced by the pulling (CZ; Czochralski) method. A single crystal silicon growing device using the CZ method is also called a single crystal silicon pulling fu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/04
CPCC30B15/04C30B29/06C30B15/20C30B15/10
Inventor 杉村涉宝来正隆
Owner SUMCO CORP
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