1T2R memory cell based on resistive random access memory and manufacturing method thereof

Abstract

The invention relates to a 1T2R memory cell based on a resistive random access memory and a manufacturing method thereof. The 1T2R memory cell based on the resistive random access memory comprises a MOSFET transistor and two resistive random access memories. The two resistive random access memories are located at a drain end of the MOSFET transistor and are connected with the MOSFET transistor inseries. The drain end of the MOSFET transistor is connected with two bit lines, and the two bit lines are connected with the two resistive random access memories. When one of the two bit lines is at ahigh level, the other bit line is at a low level. In the invention, area redundancy of a resistive random access memory array caused by introduction of MOSFET is fully used so that a storage capacityis doubled under same storage precision, or the storage precision is doubled under the same storage capacity, and the memory cell and the method are of great significance to high-density integrationof the resistive random access memories in the future.

Description

technical field [0001] The invention belongs to the technical field of semiconductor and CMOS hybrid integrated circuits, and in particular relates to a storage unit structure based on a resistive random access memory (RRAM) and a preparation method thereof. Background technique [0002] In recent years, as Moore's Law is gradually approaching the limit, traditional storage units such as Dynamic Random Access Memory (DRAM) and flash memory (Flash) are gradually facing the physical limit of size reduction, and it is difficult to improve their performance while reducing production costs. storage. In response to this problem, a series of new types of memory have emerged, such as resistive change memory, ferroelectric memory, magnetic memory and phase change memory. Among them, resistive memory has been widely valued and researched by the academic and industrial circles because of its superior performance such as high integration density, high stacking potential and low product...

AI Technical Summary

Problems solved by technology

At present, the commercial mass-produced resistive memory solutions all adopt the structure of 1T1R (one MOSFET in series with one resistive memory), which can effectively solve the two problems raised above, but the effective memory cell area will be reduced from the original 4F 2 increase to 12F 2 (F is the lithographic size of the storage unit), which reduces the storage density, and the 1T1R unit has a large redundant space on the resistive memory layer, which does not effectively utilize the advantages of the small area of ​​the resistive memory

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