Nanotube device and manufacturing method thereof

Abstract

The invention provides a nanotube device and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate in which a first source-drain region is formed; forming an annular column on the first source-drain region, the annular column comprising an annular channel region; sequentially forming annular gate dielectric layers and gates on the inner walland the outer wall of the annular channel region; and forming a second source-drain region on the annular channel region. In the method, gates are formed on the inner side wall and the outer side wallof a nanotube, so that a source region-gate-drain region nanotube device structure is formed on the inner and outer sides of the nanotube in the longitudinal direction, the gate area is increased, the gate control capability is improved, and the device has higher driving current. Moreover, the manufacturing difficulty is low, the compatibility with the existing process is good, and mass production of the nanotube device is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor devices and its manufacture, in particular to a nanotube device and its manufacturing method. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, the critical dimensions of semiconductor devices, especially field-effect transistors (MOSFETs), have been continuously reduced, even down to 7nm and below nodes, and the short-channel effect of devices has become more and more significant. Traditional planar The device has been unable to meet the requirements of the device in terms of performance and integration. [0003] At present, a three-dimensional device structure is proposed, which improves the gate control ability by increasing the number of gates and the channel area, so that the device has a stronger drive current, which can effectively suppress the short channel effect. Nanotube device is a three-dimensional device with larger channel are...

AI Technical Summary

Problems solved by technology

However, the nanotube structure is relatively complex in terms of process realization, which reduces the difficulty of manufacturing and has good compatibility with existing processes, which is the key issue for realizing the mass production of nanotube devices.

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