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Heterojunction array, preparation method and applications thereof

A heterojunction and array technology, applied in the field of two-dimensional materials, can solve the problem that the electrocatalytic hydrogen evolution performance needs to be further improved, and achieve the effects of rich catalytic active sites, good stability and durability

Active Publication Date: 2020-02-04
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the electrocatalytic hydrogen evolution performance of this catalyst still needs to be further improved.

Method used

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  • Heterojunction array, preparation method and applications thereof
  • Heterojunction array, preparation method and applications thereof
  • Heterojunction array, preparation method and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] This embodiment provides a heterojunction array, and the specific method is as follows:

[0077] (1) In a single temperature zone tube furnace, place ReO 3 source, the ReO 2 The source is placed in a cuboid box with a length, width, and height of 17mm, 13mm, and 6mm, respectively, with an opening on the upper surface, and the box is covered with a 10mm×10mm G-PI film (a certain gap is reserved for subsequent S steam entry);

[0078] (2) Pass argon gas into the single-temperature zone tube furnace with a flow rate of 50 sccm, raise the temperature for the first time to 450° C. at the place where the transition metal oxide source is placed, and perform chemical vapor deposition for 3 minutes to obtain the G-PI grown on ReO on membrane 2 nanopillars;

[0079] (3) in ReO 2 A sulfur elemental source placed in a cubic quartz crucible is placed upstream of the source, argon gas is introduced into the single-temperature zone tube furnace at a flow rate of 50 sccm, and the te...

Embodiment 2～6

[0099] The difference with embodiment 1 is only respectively, the vulcanization time in the step (3) is respectively 2min (embodiment 2), 5min (embodiment 3), 15min (embodiment 4), 20min (embodiment 5) and 30min ( Example 6).

[0100] ReS obtained by different curing time 2 / ReO 2 The morphology of the heterojunction array is as follows Figure 7 As shown, where a, b, c, d, e and f are the isomeric structures obtained by vulcanization for 2min, 5min, 10min, 15min, 20min and 30min, respectively.

[0101] Figure 7 shows that in the heterojunction obtained by curing time 2min in ReO 2 The outer walls of the nanopillars form a small amount of ReS 2 flakes, when the curing time is less than 10min, the interfacial adsorption process of sulfur limits the curing reaction, so ReO 2 ReS on the surface of nanopillars 2 The coverage of flakes increases first, but the size does not increase (a-c). Then, sulfur atoms pass through the grown existing ReS 2 The diffusion rate of the ...

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Abstract

The invention relates to a heterojunction array, a preparation method and applications thereof, wherein the heterojunction array comprises transition metal oxide nano-rods and transition metal chalcogenide nano-sheets growing on the surfaces of the transition metal oxide nano-rods. According to the invention, the heterojunction array is prepared by using a vortex flow chemical vapor deposition (VFCVD) method, wherein carrier gas enters a quasi-closed box, an eddy current transmission state is generated in the confinement space, the vapor pressure of a precursor is increased, a flexible substrate with high surface energy is used as an efficient interface trapping agent so as to control the synthesis of transition metal oxide nano-rods perpendicular to the substrate on the flexible substrate, and transition metal chalcogenide nano-sheets vertically grow on the surfaces of the nano-rods to obtain a vertical metal-semiconductor heterojunction array; and the obtained vertical metal-semiconductor heterojunction array has excellent water electrolysis hydrogen production (HER) activity and can be applied to electrocatalytic hydrogen evolution.

Description

technical field [0001] The present invention relates to the technical field of two-dimensional materials, in particular to a heterojunction array and its preparation method and application, in particular to a vertical metal-semiconductor heterojunction array and its preparation method and application. Background technique [0002] Two-dimensional transition metal dichalcogenides (TMDs), whose single layer is formed by covalent bonding of 3 atomic layers, the upper and lower layers are all chalcogen elements, and the interlayer is a transition metal layer, due to its layered structure edge The dangling bonds make it have good electrocatalytic hydrogen evolution performance. Both computational and experimental results confirm that tuning the catalytic active sites and electronic conductivity is the primary strategy to enhance the electrocatalytic hydrogen evolution performance of TMDs. Therefore, the controlled synthesis of secondary nanostructures of TMDs with abundant expos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04C25B11/06C25B1/04
CPCB01J27/04C25B11/04C25B1/04B01J35/33Y02E60/36
Inventor 冯晴亮李萌王肖剑郑建邦
Owner NORTHWESTERN POLYTECHNICAL UNIV
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