System for preparing indium phosphide crystals by utilizing indium-phosphorus mixture

An indium phosphide and mixture technology, which is applied in the field of synthesizing indium phosphide by using indium-phosphorus mixed balls, can solve the problems of increasing the contamination of materials and increasing the cost of material preparation, so as to reduce the cost of materials, reduce the pollution of materials, and improve the purity of crystals. Effect

Pending Publication Date: 2020-02-07
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Synthesis and crystal growth are carried out in a "two-step" method, which greatly increases the possibility of material contamination and increases the cost of material preparation

Method used

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  • System for preparing indium phosphide crystals by utilizing indium-phosphorus mixture
  • System for preparing indium phosphide crystals by utilizing indium-phosphorus mixture
  • System for preparing indium phosphide crystals by utilizing indium-phosphorus mixture

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Embodiment 1

[0028] Embodiment 1, a system for preparing indium phosphide crystals using an indium-phosphorus mixture, including a vacuum system, a gas charging and deflation system, a temperature and pressure control system, an electrical control system, a cooling cycle system and a weighing system. These systems are commonly used basic systems in this field, especially single crystal furnaces for preparing indium phosphide crystals based on the in-situ synthesis method. These systems are basic configurations and will not be described here. In order to realize the preparation of indium phosphide crystals by using indium-phosphorus mixed balls, the present invention improves the furnace body.

[0029] see figure 1 , the furnace body is divided into synthetic growth chamber 1, feeding chamber 19 and charging chamber 27, charging chamber 27 and feeding chamber 19 are separated up and down by inserting plate 22, and a sealing ring I22-1 is set between inserting plate 22 and the furnace wall ...

Embodiment 2

[0033] Embodiment two, see Figure 4 , the difference between this embodiment and Embodiment 1 is: in this embodiment, the feeding pipe 18 adopts a straight pipe, and the synthetic growth chamber 1 and the feeding chamber 19 are stacked in dislocation, so that the feeding pipe 18 passes into the crucible 10, and the first observation window 17 is located on the side wall of the synthetic growth chamber 1.

[0034] The steps of applying this system to prepare indium phosphide crystals are as follows:

[0035] 1) Mix high-purity indium powder and high-purity phosphorus powder evenly at a mass ratio of 3.7: 1.0-1.5, and press them into spherical indium-phosphorus mixing balls 23 .

[0036] 2) Put the boron oxide powder mixed with indium phosphorus mixing balls 23 into the carrier 24 in the charging chamber 27 , and put the boron oxide block into the crucible 10 .

[0037] 3) Vacuum the entire system to 10-10 through the air inlet 31 -5 Pa, and inert gas below 156°C is charged ...

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Abstract

The invention discloses a system for preparing indium phosphide crystals by using an indium-phosphorus mixture. The invention belongs to the technical field of semiconductors. The system comprises a vacuum system, an inflation and deflation system, a temperature and pressure control system, an electrical control system, a cooling circulation system, a weighing system and a furnace body, wherein acrucible rod rotary lifting mechanism and a seed crystal rod lifting mechanism are arranged on the furnace body; the system is characterized in that the furnace body is divided into a synthetic growthchamber, a feeding chamber and a charging chamber, the charging chamber and the feeding chamber are separated by an inserting plate, a turnover feeder is arranged in the charging chamber, a feeding pipe is arranged in the feeding chamber, one end of the feeding pipe is in butt joint with the turnover feeder, and the other end of the feeding pipe extends into a crucible in the synthetic growth chamber to form an indium-phosphorus mixed ball feeding structure; wherein the crucible is positioned on a crucible rod, and a seed crystal rod lifting mechanism is arranged on a top cover of the synthetic growth chamber. Indium-phosphorus mixed balls can be rapidly put into the crucible covered with liquid boron oxide, indium phosphide crystals are formed through in-situ pulling after synthesis, thesynthesis speed is higher, and industrial production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to the preparation of indium phosphide, in particular to a method for synthesizing indium phosphide by using indium-phosphorus mixed balls. Background technique [0002] Indium phosphide (InP) is a III-V group compound semiconductor material composed of group III element indium (In) and group V element phosphorus (P). It has a very important strategic position in the field of semiconductor materials and is the current optoelectronic Irreplaceable semiconductor materials for devices and microelectronics. Compared with germanium and silicon materials, InP has many advantages: direct transition energy band structure, high electro-optical conversion efficiency; high electron mobility, easy to make semi-insulating materials, suitable for making high-frequency microwave devices and circuits; working temperature High; strong radiation resistance; high conversion efficiency as a solar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B15/00
CPCC30B29/40C30B15/00Y02P70/50
Inventor 孙聂枫王书杰史艳磊邵会民付莉杰李晓岚王阳徐森锋刘惠生孙同年
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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