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Dielectric film and preparation method thereof

A technology of dielectric film and dielectric constant, applied in circuits, capacitors, electrical components, etc., can solve the problems of doping, limited improvement space, etc., to improve the breakdown electric field, improve energy storage characteristics, and improve energy storage density. Effect

Active Publication Date: 2020-02-11
INNER MONGOLIA UNIVERSITY
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  • Summary
  • Abstract
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  • Application Information

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Problems solved by technology

However, doping modification and control of defects only achieve the improvement of energy storage density by modifying the lattice structure, reducing the synergistic coupling effect between ferroelectric domains and reducing defects, and this situation is often at the expense of the breakdown electric field or Under the condition of polarization intensity, the energy storage density can be improved, and the improvement space is limited

Method used

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  • Dielectric film and preparation method thereof

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preparation example Construction

[0026] A method for preparing a double-layer dielectric energy storage film, comprising the following steps:

[0027] Step 1: Use the interface charge accumulation model to pre-screen the material, using the following formula

[0028]

[0029] Among them, ε 0 , ε 1 and ε 2 are the vacuum permittivity, the permittivity of raw material 1 and the permittivity of raw material 2, respectively, d 1 and d 2 are the thickness of raw material 1 and raw material 2 respectively, γ 1 and gamma 2 are the conductivity of raw material 1 and raw material 2, respectively, and u is the applied voltage of the double-layer dielectric material. Through this formula, the surface density σi of the leakage charge that can be accommodated at the interface can be calculated, and the specific value can be obtained.

[0030] Step 2: Select two materials with relatively good energy storage performance, but with differences in dielectric constant and conductivity, namely material 1 and material 2...

Embodiment 1

[0038] Implementation Example 1Na 0.5 Bi 3.25 La 1.25 Ti 4 o 15 / BaBi 3.4 La 0.6 Ti 4 o 15 Double layer dielectric energy storage film

[0039] Adopt following raw material (its purity is analytically pure, more than 99.9% of purity), utilize interface charge accumulation model; Use glue homogenizer and rapid annealing furnace to prepare Na 0.5 Bi 3.25 La 1.25 Ti 4 o 15 / BaBi 3.4 La 0.6 Ti 4 o 15 Double layer dielectric energy storage film.

[0040] The following is the preparation of a double-layer dielectric energy storage thin film with high energy storage performance Na 0.5 Bi 3.25 La 1.25 Ti 4 o 15 / BaBi 3.4 La 0.6 Ti 4 o 15 specific steps.

[0041] 1.1): Using the interface charge accumulation model to bring in the dielectric constant and conductivity of the original material, the relatively superior thickness ratio of the two materials is 19:16, and the surface density of the leakage charge that the interface can accommodate is obtained.

[00...

Embodiment 2

[0049] Implementation Example 2Na 0.5 Bi 3 La 1.5 Ti 4 o 15 / BaBi 3.1 La 0.9 Ti 4 o 15 Double layer dielectric energy storage film

[0050] Adopt following raw material (its purity is analytically pure, more than 99.9% of purity), utilize interface charge accumulation model; Use glue homogenizer and rapid annealing furnace to prepare Na 0.5 Bi 3 La 1.5 Ti 4 o 15 / BaBi 3.1 La 0.9 Ti 4 o 15 Double layer dielectric energy storage film.

[0051] The following is the preparation of a double-layer dielectric energy storage thin film with high energy storage performance Na 0.5 Bi 3 La 1.5 Ti 4 o 15 / BaBi 3.1 La 0.9 Ti 4 o 15 specific steps.

[0052] 1.1): Using the interface charge accumulation model, where Na 0.5 Bi 3 La 1.5 Ti 4 o 15 and BaBi 3.1 La 0.9 Ti 4 o 15 The dielectric constants are 352 and 408, respectively, and the conductivity is based on the formula γ=J / E. The conductivity under different electric fields is obtained from the leakage t...

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Abstract

The invention relates to a dielectric film and a preparation method thereof. The preparation method comprises the steps: adopting an interface charge accumulation model of the first material and the second material and obtaining a thickness ratio of the first material and the second material and a leakage charge surface density of the interface between the first material and the second material; and preparing the dielectric film formed of the first material and the second material of the thickness ratio. Compared with the original film, the dielectric film effectively improves the leakage performance, reduces energy loss and improves breakdown electric field so as to improve the energy storage characteristics.

Description

technical field [0001] The present invention relates to dielectric films and methods for their preparation. Background technique [0002] Compared with traditional solid oxide fuel cells, dielectric energy storage devices have faster charge and discharge speeds and higher power densities, and can be used in microwave communications, hybrid electric vehicle distributed power systems, renewable energy storage and other fields . Moreover, due to its adjustable process / structure, ultra-high energy storage density, longer service life, and wider operating temperature range, the dielectric energy storage film can be used for grid-connected green energy grids and power systems for electric energy vehicles. And provide film capacitors with high energy storage density, high power density and high voltage resistance for advanced military technologies (such as electromagnetic catapults, electromagnetic guns and laser weapons, etc.). However, due to the small volume of thin film capac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/12H01G4/33
CPCH01G4/1218H01G4/33
Inventor 赵世峰陈介煜唐哲红杨波
Owner INNER MONGOLIA UNIVERSITY
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